High-sensitivity photodetectors based on multilayer GaTe flakes.
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Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors.Influence of post-annealing on the off current of MoS2 field-effect transistorsUltrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films.Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.Photocurrent generation with two-dimensional van der Waals semiconductors.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.Fundamentals of lateral and vertical heterojunctions of atomically thin materials.Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials.Black Phosphorus Nanosheets: Synthesis, Characterization and Applications.High-performance flexible photodetectors based on GaTe nanosheets.Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors.Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared.Synthesis of 2D Layered BiI3 Nanoplates, BiI3 /WSe2 van der Waals Heterostructures and Their Electronic, Optoelectronic Properties.An ab initio study of the electronic structure of indium and gallium chalcogenide bilayers.Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides.A Black Phosphorus Carbide Infrared Phototransistor.Lateral Graphene-Contacted Vertically Stacked WS2 /MoS2 Hybrid Photodetectors with Large Gain.Black Phosphorus: Optical Characterization, Properties and Applications.GaS0.5Te0.5 monolayer as an efficient water splitting photocatalyst.Defects and oxidation of group-III monochalcogenide monolayers.van der Waals epitaxial two-dimensional CdSxSe(1-x) semiconductor alloys with tunable-composition and application to flexible optoelectronics.Non-planar vertical photodetectors based on free standing two-dimensional SnS2 nanosheets.Thickness-induced structural phase transformation of layered gallium telluride.Selenium-Doped Black Phosphorus for High-Responsivity 2D Photodetectors.Ternary CuIn7Se11 : towards ultra-thin layered photodetectors and photovoltaic devices.Recent developments in 2D layered inorganic nanomaterials for sensing.Photodetectors Based on Two-Dimensional Layered Materials Beyond GrapheneCrystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprintUltrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband responseRhenium dichalcogenides (ReX2, X = S or Se): an emerging class of TMDs family2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics
P2860
Q33466482-D80D4519-F2E0-4F3B-B139-CFAED43CD042Q35264548-FB0E7B39-D7C3-43D3-B9AE-3FC44D2D74D5Q35691523-68C83CF5-1C0C-4DAF-AB9B-BE04F9909F59Q37505119-D71A9D56-ADBB-4A08-B332-22040B82CD76Q38440569-2C1F9B60-9873-447F-9AD8-90ADC85C6A60Q38673289-EACC6FA8-AB0F-4FE9-BCBF-1358641BC82FQ38718408-E9134840-C24D-4F51-A557-1CCDF575C9BAQ38758351-7DC7BFA6-9C2B-4ABC-9313-6ECBBC684B11Q38862415-492F1610-8F15-4FC1-BCB5-FB3E27D6A2B8Q39024990-5E7ADEF0-0D1B-447F-BBBD-3A54478F8C43Q39046190-67870AB5-AF17-45D1-AD14-0C8B7D5E109CQ39361520-5252C93A-D98B-45AC-B774-E421B07FB454Q46064660-1F9D36EF-49AC-4A23-8992-2EFDC8C69CD9Q46477405-97A82AB6-FAAA-42D0-A16C-3AF261ED7993Q46826802-1531B28A-CC90-4D03-978F-C5D4FF679863Q47228797-7CB4D4C4-8E73-448E-9F8B-294380B4AB49Q47433371-75A5E10B-8937-4164-9901-FD612CE278F7Q47870705-1A999B2B-6481-49FB-9779-931FB841415DQ48017382-491E39E8-EB9F-49EF-A5BF-0EAEFF262D5CQ50066004-80F4BDEF-D9D0-48ED-8BD1-641BD2290A00Q50169700-66985D8D-AB7B-499C-84A4-4265A4AE706EQ50561226-72947C27-1DA2-4989-987A-AFC3081940C8Q50851427-0CE9929B-7D0A-4BEF-9DB5-172055E64E12Q51325004-591EB5F7-4E95-4DF9-A604-2CC5988271D3Q53408083-00D6B39F-ECE8-4F76-A1E5-78B30B6E132FQ53683400-0F70CA17-F2EE-496A-8678-748BEF35421CQ57344058-CA5375B2-8BB2-47BE-8567-F995BC27DC7FQ57390204-5F19B61B-D91B-4F3C-8AA6-24DFC5269848Q57549926-040A515A-F17A-4E33-A08B-9E65558E2FC8Q58202254-93CB025D-CEE6-49CE-97A0-993A6DA00A92Q58202273-3657166F-54BE-40FB-811B-29583936EF05
P2860
High-sensitivity photodetectors based on multilayer GaTe flakes.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
High-sensitivity photodetectors based on multilayer GaTe flakes.
@en
High-sensitivity photodetectors based on multilayer GaTe flakes.
@nl
type
label
High-sensitivity photodetectors based on multilayer GaTe flakes.
@en
High-sensitivity photodetectors based on multilayer GaTe flakes.
@nl
prefLabel
High-sensitivity photodetectors based on multilayer GaTe flakes.
@en
High-sensitivity photodetectors based on multilayer GaTe flakes.
@nl
P2093
P356
P1433
P1476
High-sensitivity photodetectors based on multilayer GaTe flakes
@en
P2093
Hidekazu Shimotani
Katsumi Tanigaki
Thangavel Kanagasekaran
Viktor Zólyomi
P304
P356
10.1021/NN4054039
P407
P577
2014-01-06T00:00:00Z