Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.

Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.

Item
http://www.wikidata.org/entity/Q39303618

Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.

Item
http://www.wikidata.org/entity/Q39303618
description
2009 nî lūn-bûn
@nan
2009年の論文
@ja
2009年学术文章
@wuu
2009年学术文章
@zh-cn
2009年学术文章
@zh-hans
2009年学术文章
@zh-my
2009年学术文章
@zh-sg
2009年學術文章
@yue
2009年學術文章
@zh
2009年學術文章
@zh-hant
name
Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.
@en
Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.
@nl
type
label
Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.
@en
Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.
@nl
prefLabel
Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.
@en
Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.
@nl
P1433
P1476
P2093
P304
P31
P356
P433
P478
P577
P5875
P698
P356
P1433
P1476
Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.
@en
P2093
P304
P31
P356
10.1088/0957-4484/20/23/235401
P433
P478
P577
P5875
P698