Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor.
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Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires.Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowiresStrongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires.Optical Polarization of Nuclear Spins in Silicon Carbide.
P2860
Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor.
description
2013 nî lūn-bûn
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2013年学术文章
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Efficient room-temperature nuc ...... efect atom in a semiconductor.
@en
Efficient room-temperature nuc ...... efect atom in a semiconductor.
@nl
type
label
Efficient room-temperature nuc ...... efect atom in a semiconductor.
@en
Efficient room-temperature nuc ...... efect atom in a semiconductor.
@nl
prefLabel
Efficient room-temperature nuc ...... efect atom in a semiconductor.
@en
Efficient room-temperature nuc ...... efect atom in a semiconductor.
@nl
P2093
P2860
P356
P1476
Efficient room-temperature nuc ...... efect atom in a semiconductor.
@en
P2093
H Riechert
I A Buyanova
L Geelhaar
Y Puttisong
P2860
P2888
P356
10.1038/NCOMMS2776
P407
P577
2013-01-01T00:00:00Z
P6179
1030150301