A new mechanism of voltage-dependent gating exposed by KV10.1 channels interrupted between voltage sensor and pore.
about
Gating mechanism of Kv11.1 (hERG) K+ channels without covalent connection between voltage sensor and pore domains.Structural insights into the mechanisms of CNBD channel function.Inhibition of the K+ conductance and Cole-Moore shift of the oncogenic Kv10.1 channel by amiodarone.Functional characterization of Kv11.1 (hERG) potassium channels split in the voltage-sensing domain.
P2860
A new mechanism of voltage-dependent gating exposed by KV10.1 channels interrupted between voltage sensor and pore.
description
2017 nî lūn-bûn
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2017年の論文
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2017年論文
@yue
2017年論文
@zh-hant
2017年論文
@zh-hk
2017年論文
@zh-mo
2017年論文
@zh-tw
2017年论文
@wuu
2017年论文
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2017年论文
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name
A new mechanism of voltage-dep ...... tween voltage sensor and pore.
@en
type
label
A new mechanism of voltage-dep ...... tween voltage sensor and pore.
@en
prefLabel
A new mechanism of voltage-dep ...... tween voltage sensor and pore.
@en
P2093
P2860
P50
P356
P1476
A new mechanism of voltage-dep ...... tween voltage sensor and pore.
@en
P2093
Gyorgy Panyi
Shashank Bharill
Walter Stühmer
P2860
P304
P356
10.1085/JGP.201611742
P577
2017-03-30T00:00:00Z