Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

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Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures.Investigating Metal⁻Insulator Transition and Structural Phase Transformation in the (010)-VO₂/(001)-YSZ Epitaxial Thin Films

P2860

Q55139807-6D674BCA-903F-4F66-8545-8F868D3997E1 Q58742608-15AE548B-D867-4F49-94CC-43324901FE24

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Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

Item

http://www.wikidata.org/entity/Q41850609

description

2017 nî lūn-bûn

@nan

2017年の論文

@ja

2017年論文

@yue

2017年論文

@zh-hant

2017年論文

@zh-hk

2017年論文

@zh-mo

2017年論文

@zh-tw

2017年论文

@wuu

2017年论文

@zh

2017年论文

@zh-cn

name

Heterojunction oxide thin-film ...... mobility grown from solution.

@en

type

Item

label

Heterojunction oxide thin-film ...... mobility grown from solution.

@en

prefLabel

Heterojunction oxide thin-film ...... mobility grown from solution.

@en

P1476

Heterojunction oxide thin-film ...... n mobility grown from solution

@en

P2093

Aram Amassian

http://www.w3.org/2001/XMLSchema#string

Panos A Patsalas

http://www.w3.org/2001/XMLSchema#string

Satyajit Das

http://www.w3.org/2001/XMLSchema#string

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Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.

High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.

Transition metal oxides for organic electronics: energetics, device physics and applications.

Solution-processable metal oxide semiconductors for thin-film transistor applications.

Metal oxides for optoelectronic applications.

Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies.

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.

P304

e1602640

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1126/SCIADV.1602640

http://www.w3.org/2001/XMLSchema#string

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

Thomas D. Anthopoulos

Yen-Hung Lin

Hendrik Faber

Thomas Kehagias

George Dimitrakopulos

Nikos Pliatsikas

Kui Zhao

P577

2017-03-31T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

28435867

http://www.w3.org/2001/XMLSchema#string

P921

thin film

P932

5375640

http://www.w3.org/2001/XMLSchema#string

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

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P2860

P2860

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P433

P478

P50

P577

P698

P921

P932

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P433

P478

P50

P577

P698

P921

P932