Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing.
about
Flexible bottom-gate graphene transistors on Parylene C substrate and the effect of current annealing.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Flexible bottom-gate graphene ...... e effect of current annealing.
@en
type
label
Flexible bottom-gate graphene ...... e effect of current annealing.
@en
prefLabel
Flexible bottom-gate graphene ...... e effect of current annealing.
@en
P2093
P2860
P356
P1476
Flexible bottom-gate graphene ...... e effect of current annealing.
@en
P2093
Hyungsoo Kim
Jihye Bong
Justin C Williams
Tong June Kim
Zhenqiang Ma
P2860
P304
P356
10.1063/1.4964853
P407
P577
2016-10-13T00:00:00Z