about
Amazing ageing property and in situ comparative study of field emission from tungsten oxide nanowires.Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum.Batch-fabricated high-performance graphene Hall elementsQuantum capacitance limited vertical scaling of graphene field-effect transistor.Region-selective self-assembly of functionalized carbon allotropes from solution.Graphene integrated circuits: new prospects towards receiver realisation.High-performance carbon nanotube light-emitting diodes with asymmetric contacts.High performance metal-insulator-graphene diodes for radio frequency power detection application.Large signal operation of small band-gap carbon nanotube-based ambipolar transistor: a high-performance frequency doubler.Scalable fabrication of ambipolar transistors and radio-frequency circuits using aligned carbon nanotube arrays.Basal-Plane Functionalization of Chemically Exfoliated Molybdenum Disulfide by Diazonium SaltsDriving forces for the self-assembly of graphene oxide on organic monolayersA facile approach to synthesize an oxo-functionalized graphene/polymer composite for low-voltage operating memory devicesCarbon Nanotube Based Multifunctional Ambipolar Transistors for AC ApplicationsCarbon nanotube arrays based high-performance infrared photodetector [Invited]Contact length scaling in graphene field-effect transistorsDoping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristicsGraphene-based ambipolar electronics for radio frequency applicationsElectronic transport in single-walled carbon nanotube/graphene junctionNitrogen-Doped Single-Walled Carbon Nanotubes Grown on Substrates: Evidence for Framework Doping and Their Enhanced PropertiesTemperature Performance of Doping-Free Top-Gate CNT Field-Effect Transistors: Potential for Low- and High-Temperature ElectronicsPhotovoltaic Effects in Asymmetrically Contacted CNT Barrier-Free Bipolar DiodeVisible Light Response of Unintentionally Doped ZnO Nanowire Field Effect TransistorsEncapsulated graphene-based Hall sensors on foil with increased sensitivityFlexible Hall sensors based on grapheneGate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity
P50
Q33812724-7114CA63-D309-4F01-8898-85BDDC67E975Q35801532-081D38CF-55DC-4EB3-8F14-DD85F941ADB1Q42180978-58281643-5153-457C-9C44-2E10EB70935DQ44238436-320B0A95-4F98-4F10-9671-609FF4216B73Q45773307-24C1CAB1-424D-4F17-9C6D-4154E7AB61EDQ47279382-169D826B-1EF1-4012-B653-A8CFE2B86555Q53077251-B92B44D4-542C-46E5-AA41-CF46E7D7327EQ53252723-D20EC36D-849A-4868-906A-4713465E33D5Q54185011-22BCCEB9-E57A-48D3-8EBC-A6EFAB379020Q54331784-57C11E86-1975-414F-92C3-5E94D93337DAQ58231843-E139DDE3-9047-4640-8A56-812CCE220DF4Q58231863-9D2DA0D3-0B55-40D2-A3CE-4BD33C044BB7Q60317677-DAA02828-EF65-4F52-942E-FC914CB6EB55Q62097678-A6566C0F-D950-4CD3-80D0-B59564D14E67Q62097690-BA36CAB9-2850-4928-8C75-2B5757515250Q62097693-4FA771DD-46FC-4A73-8020-CAEAFC7C508AQ62097695-55FDC25C-6D61-46FB-8156-5F90ADC323FBQ62097696-83770B4A-44C0-4F7C-9229-9BD838B96C3EQ62097700-EDD81254-3CF4-46B5-939C-534EFD861C44Q62097703-922C544E-3FB6-4BF4-A0A1-3BA556A85812Q62097706-F96745A6-38EF-4A7F-A690-E5968A92AC1AQ62097723-23353CF4-E5B7-4F62-9A5A-3B8B156A1D33Q62097726-EFE68F4A-1B2E-4114-B6C3-7FB124003675Q62126027-15F0DA3B-0023-4EAD-AC27-F9BBDB11C979Q87502071-9F94981F-68E0-406C-B3A6-48A2A4D574B1Q91619832-FBE36E27-CDD0-45E1-A9FE-94C69BB14124
P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Zhenxing Wang
@ast
Zhenxing Wang
@en
Zhenxing Wang
@es
Zhenxing Wang
@nl
Zhenxing Wang
@sl
type
label
Zhenxing Wang
@ast
Zhenxing Wang
@en
Zhenxing Wang
@es
Zhenxing Wang
@nl
Zhenxing Wang
@sl
prefLabel
Zhenxing Wang
@ast
Zhenxing Wang
@en
Zhenxing Wang
@es
Zhenxing Wang
@nl
Zhenxing Wang
@sl
P106
P31
P496
0000-0002-2103-7692