Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

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An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications.Scattering Theory of Graphene Grain Boundaries

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P2860

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

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http://www.wikidata.org/entity/Q42329683

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2016 nî lūn-bûn

@nan

2016年の論文

@ja

2016年論文

@yue

2016年論文

@zh-hant

2016年論文

@zh-hk

2016年論文

@zh-mo

2016年論文

@zh-tw

2016年论文

@wuu

2016年论文

@zh

2016年论文

@zh-cn

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Contact Resistance and Channel ...... ow-Energy Electron Irradiation

@en

Contact Resistance and Channel ...... ow-Energy Electron Irradiation

@nl

type

Item

label

Contact Resistance and Channel ...... ow-Energy Electron Irradiation

@en

Contact Resistance and Channel ...... ow-Energy Electron Irradiation

@nl

prefLabel

Contact Resistance and Channel ...... ow-Energy Electron Irradiation

@en

Contact Resistance and Channel ...... ow-Energy Electron Irradiation

@nl

P1476

Contact Resistance and Channel ...... ow-Energy Electron Irradiation

@en

P2093

Laura Iemmo

http://www.w3.org/2001/XMLSchema#string

Nadia Martucciello

http://www.w3.org/2001/XMLSchema#string

Paola Romano

http://www.w3.org/2001/XMLSchema#string

P2860

Electric Field Effect in Atomically Thin Carbon Films

The electronic properties of graphene

Graphene transistors.

Detection of individual gas molecules adsorbed on graphene.

Engineering of nanostructured carbon materials with electron or ion beams.

Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation.

Enhancement of the electrical properties of graphene grown by chemical vapor deposition via controlling the effects of polymer residue.

Approaching ballistic transport in suspended graphene.

Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors.

Hysteresis of electronic transport in graphene transistors.

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scholarly article

P356

10.3390/NANO6110206

http://www.w3.org/2001/XMLSchema#string

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

F Giubileo

Maurizio Passacantando

Francesco Romeo

Antonio Di Bartolomeo

P577

2016-11-10T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

28335335

http://www.w3.org/2001/XMLSchema#string

P818

1608.00716

http://www.w3.org/2001/XMLSchema#string

P921

graphene

P932

5245740

http://www.w3.org/2001/XMLSchema#string

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

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P2860

P2860

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P31

P356

P433

P478

P50

P577

P698

P818

P921

P932

P356

P1433

P1476

P2093

P2860

P31

P356

P433

P478

P50

P577

P698

P818

P921

P932