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Silicene nanomeshSub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.Graphene-based nanoresonator with applications in optical transistor and mass sensingUniform hexagonal graphene flakes and films grown on liquid copper surface.Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes.The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment.Ferroelectric memory based on nanostructures.Graphene-based flexible and stretchable thin film transistors.Graphene: an emerging electronic material.Surface Plasmon-Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays.Nonlinear current-voltage characteristics and enhanced negative differential conductance in graphene field effect transistors.Fabrication and characterization of fully flattened carbon nanotubes: a new graphene nanoribbon analogue.Top-gated chemical vapor deposition grown graphene transistors with current saturation.Scalable fabrication of self-aligned graphene transistors and circuits on glass.Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.Plasmon resonance enhanced multicolour photodetection by graphene.Strain induced chemical potential difference between monolayer graphene sheets.Synthesis of 2D Layered BiI3 Nanoplates, BiI3 /WSe2 van der Waals Heterostructures and Their Electronic, Optoelectronic Properties.Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.Interface engineering for high-performance top-gated MoS2 field-effect transistors.Correlated Electron Materials and Field Effect Transistors for Logic: A ReviewGraphene microwave transistors on sapphire substratesA role for graphene in silicon-based semiconductor devices
P2860
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P2860
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
2010年论文
@zh
2010年论文
@zh-cn
name
Sub-100 nm channel length graphene transistors.
@en
Sub-100 nm channel length graphene transistors.
@nl
type
label
Sub-100 nm channel length graphene transistors.
@en
Sub-100 nm channel length graphene transistors.
@nl
prefLabel
Sub-100 nm channel length graphene transistors.
@en
Sub-100 nm channel length graphene transistors.
@nl
P2093
P2860
P356
P1433
P1476
Sub-100 nm channel length graphene transistors.
@en
P2093
Jingwei Bai
Shan Jiang
Yongquan Qu
Yung-Chen Lin
P2860
P304
P356
10.1021/NL101724K
P407
P577
2010-10-01T00:00:00Z