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A simple approach to characterizing block copolymer assemblies: graphene oxide supports for high contrast multi-technique imaging.Osmium Atoms and Os2 Molecules Move Faster on Selenium-Doped Compared to Sulfur-Doped Boronic Graphenic SurfacesQuantitative strain mapping applied to aberration--corrected HAADF images.Electron tomography of III-V quantum dots using dark field 002 imaging conditions.Fabrication of crystals from single metal atoms.Structural reorganization of cylindrical nanoparticles triggered by polylactide stereocomplexation.Bismuth incorporation and the role of ordering in GaAsBi/GaAs structuresArtefacts in geometric phase analysis of compound materials.Atomic Defects and Doping of Monolayer NbSe2.Polarization curling and flux closures in multiferroic tunnel junctions.Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111).Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substrates.Strain Relief Analysis of InN Quantum Dots Grown on GaN.Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors.III-V quantum light source and cavity-QED on silicon.Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy.Retarding oxidation of copper nanoparticles without electrical isolation and the size dependence of work function.Doping of Self-Catalyzed Nanowires under the Influence of Droplets.Room-Temperature Mid-Infrared Emission from Faceted InAsSb Multi Quantum Wells Embedded in InAs Nanowires.Influence of Droplet Size on the Growth of Self-Catalyzed Ternary GaAsP Nanowires.Growth of Pure Zinc-Blende GaAs(P) Core-Shell Nanowires with Highly Regular Morphology.Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer.Shape Engineering Driven by Selective Growth of SnO2 on Doped Ga2O3 Nanowires.Nonradiative Step Facets in Semiconductor Nanowires.Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics.Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals.Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.Nanoscale Inhomogeneous Superconductivity in Fe(Te1-xSex) Probed by Nanostructure Transport.Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.The Peak Pairs algorithm for strain mapping from HRTEM images.Stable Defects in Semiconductor Nanowires.High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure p-GaAs Nanowire.Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite.Structural analysis of strained quantum dots using nuclear magnetic resonanceLateral heterojunctions within monolayer MoSe 2 –WSe 2 semiconductorsMorphology – composition correlations in carbon nanotubes synthesised with nitrogen and phosphorus containing precursorsRapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacksSb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam EpitaxyQuantitative High-Dynamic-Range Electron Diffraction of Polar Nanodomains in Pb2 ScTaO6Polarity-Driven Quasi-3-Fold Composition Symmetry of Self-Catalyzed III–V–V Ternary Core–Shell Nanowires
P50
Q30544885-EAA20DF0-D36C-416D-B63D-3E056CD06101Q30669787-71555CF3-70D2-4E85-A4F3-B7496440012BQ33250273-141192C5-4146-4597-AB07-26A15F284705Q33526027-5C63B068-6A0A-42D7-A229-A5F1D6F1EBF3Q33729390-3CEDC5A1-34E9-4177-AF54-30954E7F7685Q34800567-6D422DAB-8BA8-450D-864A-BEB1C4A205E4Q35085042-EE35F2EA-4563-4F88-8114-BF151F51766CQ35669682-64807D12-7271-4A34-818F-4EAE85978F34Q36279775-F3A6C1C8-F3EF-406C-9D0F-E0D10EDF25B9Q37423788-A80317BC-4198-426D-83CD-0334DEE2A58AQ37424887-2FE8BF6B-872C-48EA-9FA6-1CC266178DDAQ38417983-60F395E6-4CA4-4848-9941-0E25BDD4E65CQ39341701-2E1C5A39-A4DB-48D8-B140-13AF70405AF5Q41892527-8DA08187-C7E5-422D-AB2F-68C22E7B57CDQ41980332-B6C9CCE7-34FE-43AA-AC2F-09A8EA068929Q42733003-6FEBE348-8EDA-4B0D-AB6F-0B4B0A1523B1Q47114460-B6287DE3-69A5-4FB2-80B0-D39DDD1F0974Q47282384-58521DBC-C0C8-497D-A4BE-9EC86907C889Q47298286-48F0F865-636B-4B60-AFAB-407A0755DDFBQ47337208-4BB68C09-F6C9-4D00-8473-D8C630DA095AQ47864333-636C7F7D-0148-4437-96B0-2AC7D21E3A9DQ48111618-97E4ED1C-3B27-4572-8D2D-23B73B49B9C6Q48129031-594766D3-CCB8-4B2F-B4F6-E89FB1A6563BQ48365923-09764B1F-4CA3-4CDC-8F27-C2FB40EDBD8DQ50904509-38CB42AB-9127-4E58-8ED5-68DFCC58D7BDQ51178300-2AAC54E0-F928-4A9D-8D27-70822508A428Q51474416-E6026DF8-67D8-4F93-9226-35C8261CB798Q51597600-08CED5D2-A7F6-4AA1-A302-48382BE59E85Q51603906-61BF8DB5-0A53-4904-8E1C-FC56198419CCQ51918775-1DC58C80-C931-40CA-8C83-FD90D966D7E6Q52602824-E30C18BC-302E-41CD-A38B-16F812FACFC0Q52610959-48EF3089-E1BD-434F-864F-9C6D062BF30CQ53205239-745E95C7-FCCC-4520-98F1-9EA22E74ECE3Q57184072-47D5A454-1014-421F-8252-40024F5EF197Q59484213-7E76D45B-5CC7-4FD3-84D0-5DEFD384A5C8Q60560738-6C040F65-D17C-410C-B0D1-805BD2216B2DQ61611463-1617FC2C-7EB2-490D-820B-9CE06BE57E23Q62041862-208D9593-7CEC-44BC-9D1E-EC267B59875CQ62267103-8DBD4884-438F-4DCC-95E4-3B2D2254DDB8Q62267164-0003B252-B61C-4964-87C3-75120CDF3EF1
P50
description
hulumtuese
@sq
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Ana M. Sanchez
@ast
Ana M. Sanchez
@en
Ana M. Sanchez
@es
Ana M. Sanchez
@nl
type
label
Ana M. Sanchez
@ast
Ana M. Sanchez
@en
Ana M. Sanchez
@es
Ana M. Sanchez
@nl
altLabel
Ana Sanchez
@en
prefLabel
Ana M. Sanchez
@ast
Ana M. Sanchez
@en
Ana M. Sanchez
@es
Ana M. Sanchez
@nl
P1053
F-3153-2010
P106
P1153
56946096400
P21
P31
P3829
P496
0000-0002-8230-6059