Transparent high-performance thin film transistors from solution-processed SnO2 /ZrO2 gel-like precursors.
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Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.Solution processable broadband transparent mixed metal oxide nanofilm optical coatings via substrate diffusion doping.Materials chemistry. Composition-matched molecular "solders" for semiconductors.
P2860
Transparent high-performance thin film transistors from solution-processed SnO2 /ZrO2 gel-like precursors.
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年学术文章
@wuu
2012年学术文章
@zh
2012年学术文章
@zh-cn
2012年学术文章
@zh-hans
2012年学术文章
@zh-my
2012年学术文章
@zh-sg
2012年學術文章
@yue
2012年學術文章
@zh-hant
name
Transparent high-performance t ...... nO2 /ZrO2 gel-like precursors.
@en
Transparent high-performance t ...... nO2 /ZrO2 gel-like precursors.
@nl
type
label
Transparent high-performance t ...... nO2 /ZrO2 gel-like precursors.
@en
Transparent high-performance t ...... nO2 /ZrO2 gel-like precursors.
@nl
prefLabel
Transparent high-performance t ...... nO2 /ZrO2 gel-like precursors.
@en
Transparent high-performance t ...... nO2 /ZrO2 gel-like precursors.
@nl
P2093
P2860
P356
P1433
P1476
Transparent high-performance t ...... SnO2 /ZrO2 gel-like precursors
@en
P2093
Eung Seok Park
Jaewon Jang
Rungrot Kitsomboonloha
Sarah L Swisher
Vivek Subramanian
P2860
P304
P356
10.1002/ADMA.201202997
P407
P50
P577
2012-11-14T00:00:00Z