Programmable polymer thin film and non-volatile memory device.
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Overview of emerging nonvolatile memory technologiesNonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.Effect of a π-spacer between a donor and an acceptor on small molecule-based data-storage device performance.Multilevel data storage memory devices based on the controlled capacitive coupling of trapped electrons.Tailored Composite Polymer-Metal Nanoparticles by Miniemulsion Polymerization and Thiol-ene Functionalization.Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.Surface Functionalization Methods to Enhance Bioconjugation in Metal-Labeled Polystyrene Particles.Chemically modified flexible strips as electrochemical biosensors.Application of nanomaterials in two-terminal resistive-switching memory devices.Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blendsAll oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronicsLarge-area, flexible imaging arrays constructed by light-charge organic memoriesOxygen Effects on Performance of Electrically Bistable Devices Based on Hybrid Silver Sulfide Poly(N-vinylcarbazole) Nanocomposites.Characterization of spherical domains at the polystyrene thin film-water interface.Flexible All-organic, All-solution Processed Thin Film Transistor Array with Ultrashort Channel.Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices.Polymer Nanodot-Hybridized Alkyl Silicon Oxide Nanostructures for Organic Memory Transistors with Outstanding High-Temperature Operation Stability.Gold nanoparticle charge trapping and relation to organic polymer memory devices.Negative differential resistance and carrier transport of electrically bistable devices based on poly(N-vinylcarbazole)-silver sulfide compositesGraphene and its derivatives: switching ON and OFF.Photochromic transduction layers in organic memory elements.Polymer-based resistive memory materials and devices.Optically Isotropic, Colorless, and Flexible PITEs/TiO2 and ZrO2 Hybrid Films with Tunable Refractive Index, Abbe Number, and Memory PropertiesA Novel Bat-Shaped Dicyanomethylene-4H-pyran-Functionalized Naphthalimide for Highly Efficient Solution-Processed Multilevel Memory Devices.Oligosaccharide Carbohydrate Dielectrics toward High-Performance Non-volatile Transistor Memory Devices.A Solution-Processable Donor-Acceptor Compound Containing Boron(III) Centers for Small-Molecule-Based High-Performance Ternary Electronic Memory Devices.Resistive Switching Memory Devices Based on Proteins.Li-Ion Synaptic Transistor for Low Power Analog Computing.Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.Theranostic implications of nanotechnology in multiple sclerosis: a future perspective.Black phosphorus nonvolatile transistor memory.Digital memory device based on tobacco mosaic virus conjugated with nanoparticles.Overview of organic memory devices.Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer.Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices.Enabling strategies in organic electronics using ordered block copolymer nanostructures.Inorganic nanoparticle multilayers using photo-crosslinking layer-by-layer assembly and their applications in nonvolatile memory devices.Capillary levelling of a cylindrical hole in a viscous film.Decreasing the energy consumption of memory devices by enhancing the conjugation extent of the terminal electron-donating moieties within molecules.Multi-layer stackable polymer memory devices.
P2860
Q21245407-C2600632-4A21-4304-97A9-F3D65EE90C0FQ30658272-028054D8-2749-4CAF-A2AC-72D789B9273AQ30665521-A1BF7502-16C5-4459-A3A2-0CD1E6BB98A7Q33888355-952EB672-619C-4FA3-9648-299E008CFE68Q34013334-54EF15DE-D46F-48DF-855A-BBCC0EABB4F8Q34977503-FC431B7E-8A9F-4525-8D8E-B7A97B0FACC5Q35126329-79679E34-2AA9-489D-988A-A668A41047E4Q35211069-362FF0B0-00C4-4162-BA30-AFA9B2512758Q35547372-09E207AE-5B6A-4CCF-BAE7-BBB87C90B082Q35669814-11B1F159-A92F-4D4D-AADE-820B419F9916Q35973457-9E7EE7BC-51AD-4983-A519-DBA00C38D7BEQ36537206-929E8324-99D9-46DF-B42F-691D4A8ED910Q36541374-73EF0831-03C0-4CC6-BAFD-8AD6FAF52A97Q36991456-10BFE4B6-0308-412E-B040-0050F8068DF2Q37063967-CD7E2166-01B2-404C-A9E1-C5E47005AAA9Q37278011-B8F74E16-02E7-47FD-8607-765F0C0B4354Q37310710-73162B4E-EBA6-49B0-BE31-0E3CAEC9B1B5Q37601087-4403317C-1B8C-4164-88EA-B6C206605578Q37715899-7C80C0F6-F78E-49E6-9C2D-8FEA6038B255Q38014725-F124FA4F-981A-4612-8E75-E840FC3A3BF9Q38083271-7DAF2BD3-259C-41ED-8437-6EA7B2D4A0CEQ38171446-02E1B727-483F-4C54-88BA-B5FAB798F21FQ38643582-F695147B-5F3D-4720-BA63-454517CBC215Q38833191-FDA71CB0-AC84-48C4-AEA0-D7FBD5431A55Q38968151-31F19A99-639F-482A-8C0B-A8D391967E73Q38984246-B065E435-568E-4C1A-B94D-66366D86EEA9Q39031216-F839C178-1547-4AD0-90FF-BCA7D9F73CAAQ39164360-D0FF4C95-9F9C-415A-933A-F68C130A4B37Q39323182-3285A986-A0E5-42CA-9091-CDE57D9AD688Q39479822-77E1F196-B3B0-411E-B6DA-EFF4D70B83B4Q39853586-958F17A0-466E-42AE-81DB-86D15D3D5D1BQ39854776-53C96784-4C7C-470F-BCC1-D9DBDFC38276Q39945249-84C02961-74E6-4C62-92A3-46EDC609B040Q41073360-CC903CB1-38FC-45EB-A212-E796884A628FQ42683893-2BC07C0F-5721-4F3C-AEC8-1C40E3106739Q42860714-9262C4C4-2A47-46C8-B55E-49073D7EA4EDQ44571297-6E994444-EB3D-4119-902B-BC7161ED3F48Q45154420-4070613B-1980-4EE8-8D7B-9AAA1442B4FDQ45754424-5864A46B-EDB1-4866-B465-6A4A5F71410FQ45977594-2DA2084C-2EA6-4595-A79A-A51293A8848C
P2860
Programmable polymer thin film and non-volatile memory device.
description
2004 nî lūn-bûn
@nan
2004年の論文
@ja
2004年学术文章
@wuu
2004年学术文章
@zh
2004年学术文章
@zh-cn
2004年学术文章
@zh-hans
2004年学术文章
@zh-my
2004年学术文章
@zh-sg
2004年學術文章
@yue
2004年學術文章
@zh-hant
name
Programmable polymer thin film and non-volatile memory device.
@en
Programmable polymer thin film and non-volatile memory device.
@nl
type
label
Programmable polymer thin film and non-volatile memory device.
@en
Programmable polymer thin film and non-volatile memory device.
@nl
prefLabel
Programmable polymer thin film and non-volatile memory device.
@en
Programmable polymer thin film and non-volatile memory device.
@nl
P2093
P2860
P356
P1433
P1476
Programmable polymer thin film and non-volatile memory device.
@en
P2093
Charles R Szmanda
Chih-Wei Chu
Jianyong Ouyang
P2860
P2888
P304
P356
10.1038/NMAT1269
P407
P577
2004-11-28T00:00:00Z
P5875
P6179
1003794737