In(x)Ga(1-x)As nanowire growth on graphene: van der Waals epitaxy induced phase segregation.
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25th anniversary article: hybrid nanostructures based on two-dimensional nanomaterials.One-dimension-based spatially ordered architectures for solar energy conversion.Au-seeded growth of vertical and in-plane III-V nanowires on graphite substrates.Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires.Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors.Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy.Charge transfer in crystalline germanium/monolayer MoS2 heterostructures prepared by chemical vapor deposition.Monolithic III-V nanowire solar cells on graphene via direct van der Waals epitaxy.Morphology and composition controlled GaxIn1−xSb nanowires: understanding ternary antimonide growthGraphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiCInGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emittersVan der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAsSubstrate-Dependent Differences in the Crystal Structures and Optical Properties of ZnSe Nanowires
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P2860
In(x)Ga(1-x)As nanowire growth on graphene: van der Waals epitaxy induced phase segregation.
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2013 nî lūn-bûn
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name
In(x)Ga(1-x)As nanowire growth ...... axy induced phase segregation.
@en
type
label
In(x)Ga(1-x)As nanowire growth ...... axy induced phase segregation.
@en
prefLabel
In(x)Ga(1-x)As nanowire growth ...... axy induced phase segregation.
@en
P2093
P356
P1433
P1476
In(x)Ga(1-x)As nanowire growth ...... taxy induced phase segregation
@en
P2093
Ashkan Behnam
Christopher D English
Joseph W Lyding
Joshua D Wood
Xiuling Li
P304
P356
10.1021/NL304569D
P407
P577
2013-02-28T00:00:00Z