about
A new generation of sensors based on extraordinary optical transmissionEnhanced fluorescence from arrays of nanoholes in a gold film.Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires.Preparation of ideal molecular junctions: depositing non-invasive gold contacts on molecularly modified silicon.Field dependent transport properties in InAs nanowire field effect transistors.Molecular orientation in octanedithiol and hexadecanethiol monolayers on GaAs and Au measured by infrared spectroscopic ellipsometry.Rapid fabrication of nano-structured quartz stamps.Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition.Nanometer-resolved spatial variations in the Schottky barrier height of a Au/n-type GaAs diode.Surface plasmon sensor based on the enhanced light transmission through arrays of nanoholes in gold films.Detecting Antibodies Secreted by Trapped Cells Using Extraordinary Optical TransmissionImproved Performance of Nanohole Surface Plasmon Resonance Sensors by the Integrated Response MethodSurface Plasmon−Quantum Dot Coupling from Arrays of NanoholesBasis and Lattice Polarization Mechanisms for Light Transmission through Nanohole Arrays in a Metal FilmNanohole-Enhanced Raman ScatteringErratum: ‘‘Time dependent ballistic electron emission microscopy studies of a Au/(100)GaAs interface with a native oxide diffusion barrier’’ [Appl. Phys. Lett. 62, 2965 (1993)]Time dependent ballistic electron emission microscopy studies of a Au/(100)GaAs interface with a native oxide diffusion barrierTransport and strain relaxation in wurtzite InAs–GaAs core-shell heterowiresAxial EBIC oscillations at core/shell GaAs/Fe nanowire contactsRegrowth mechanism for oxide isolation of GaAs nanowiresNanocontactsImproved chemical and electrical stability of gold silicon contacts via epitaxial electrodepositionLateral spin injection and detection through electrodeposited Fe/GaAs contactsFaster radial strain relaxation in InAs–GaAs core–shell heterowiresReduction of Gold Penetration through Phenyl-Terminated Alkyl Monolayers on SiliconEpitaxial Growth of Metals on Semiconductors Via ElectrodepositionA New Technique for Magnetic Nanoparticle Imaging Using Magnetoencephalography Frequency DataMisfit dislocations in nanowire heterostructuresAre we seeing atoms diffuse?Inhomogeneous magnetization processes in electrodeposited iron thin films on GaAsStructural and Room-Temperature Transport Properties of Zinc Blende and Wurtzite InAs NanowiresAu∕Ag and Au∕Pd molecular contacts to GaAsDefect studies of ZnSe nanowiresEpitaxial Fe[sub x]Ni[sub 1−x] Thin Film Contacts to GaAs via ElectrochemistryNanoscale Electrical and Structural Characterization of Gold/Alkyl Monolayer/Silicon Diode JunctionsOptimal Control over the InAs Nanowire Growth for System Integration and their Structural and Transport PropertiesStructural and electrical characteristics of nanocrystalline silicon prepared by hot-wire chemical vapor deposition on polymer substratesLuminescent Colloidal SI Suspensions from Porous SIStructural and electrical characteristics of microcrystalline silicon prepared by hot-wire chemical vapor deposition using a graphite filamentAligned Co nanodiscs by electrodeposition on GaAs
P50
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P50
description
hulumtuese
@sq
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Karen L. Kavanagh
@ast
Karen L. Kavanagh
@en
Karen L. Kavanagh
@es
Karen L. Kavanagh
@nl
Karen L. Kavanagh
@sl
type
label
Karen L. Kavanagh
@ast
Karen L. Kavanagh
@en
Karen L. Kavanagh
@es
Karen L. Kavanagh
@nl
Karen L. Kavanagh
@sl
altLabel
Karen Lynne Kavanagh
@en
prefLabel
Karen L. Kavanagh
@ast
Karen L. Kavanagh
@en
Karen L. Kavanagh
@es
Karen L. Kavanagh
@nl
Karen L. Kavanagh
@sl
P106
P1153
35433107700
P21
P31
P496
0000-0002-3059-7528