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Electric-field controlled spin in bilayer triangular graphene quantum dotsInterfacial properties of bilayer and trilayer graphene on metal substratesAnalytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.Tunable band gap in few-layer graphene by surface adsorption.Graphene: materials in the Flatland (Nobel lecture).Flake electrical conductivity of few-layer graphene.Electron-phonon interactions in bilayer grapheneElectrically tunable resonant scattering in fluorinated bilayer grapheneClassic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect TransistorThe Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode PerformanceCapacitance Variation of Electrolyte-Gated Bilayer Graphene Based Transistors
P2860
Q21708347-C9E47553-D20A-4EC4-92A8-FC2C3EDC2B59Q36959317-E7FCE92B-5947-4A43-B839-0A4C8B7DC0A2Q41851147-B9A16B64-CBAD-4AB2-A33F-46D95C48DBE6Q46445035-67190E30-0A02-49EC-A54D-8695D3EA22F9Q48538207-630768BE-FD30-46A1-A0A1-0EA920A67BCBQ51110735-998F1019-B6B3-4EB3-B710-ED72155BCF7EQ57436268-999254FE-D424-418D-A058-33AA07895627Q57584085-841DE493-DCD4-4094-AA28-38170EE0C722Q59016414-D49E3DE5-FF48-45FB-B391-89314F7E4589Q59017248-E5C9DB73-8BF9-4847-9E88-F736601355A8Q59019408-1D8B9F5F-6C45-4860-88AC-88C3F7FB7E2D
P2860
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年学术文章
@wuu
2010年学术文章
@zh
2010年学术文章
@zh-cn
2010年学术文章
@zh-hans
2010年学术文章
@zh-my
2010年学术文章
@zh-sg
2010年學術文章
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2010年學術文章
@zh-hant
name
Electronic properties of a biased graphene bilayer.
@en
Electronic properties of a biased graphene bilayer.
@nl
type
label
Electronic properties of a biased graphene bilayer.
@en
Electronic properties of a biased graphene bilayer.
@nl
prefLabel
Electronic properties of a biased graphene bilayer.
@en
Electronic properties of a biased graphene bilayer.
@nl
P50
P356
P1476
Electronic properties of a biased graphene bilayer
@en
P2093
A H Castro Neto
P304
P356
10.1088/0953-8984/22/17/175503
P50
P577
2010-04-12T00:00:00Z