Ultrahigh responsivity visible and infrared detection using silicon nanowire phototransistors.
about
Reversible modulation of spontaneous emission by strain in silicon nanowires.Large-area synthesis of monolayer WSe₂ on a SiO₂/Si substrate and its device applications.Versatile pattern generation of periodic, high aspect ratio Si nanostructure arrays with sub-50-nm resolution on a wafer scaleFormation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching methodElectrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions.Light trapping and surface plasmon enhanced high-performance NIR photodetector.Light-induced metal-like surface of silicon photonic waveguidesHybrid Organic-Inorganic Perovskite Photodetectors.Enhanced Performance of a Self-Powered Organic/Inorganic Photodetector by Pyro-Phototronic and Piezo-Phototronic Effects.Photocurrent enhancement of SiNW-FETs by integrating protein-shelled CdSe quantum dots.Highly sensitive and multispectral responsive phototransistor using tungsten-doped VO2 nanowires.Uncovering the density of nanowire surface trap states hidden in the transient photoconductance.Visible-NIR photodetectors based on CdTe nanoribbons.Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity.Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector.CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization.The role of surface states in modification of carrier transport in silicon nanowiresPhotodetection and transport properties of surface capped silicon nanowires arrays with polyacrylic acidPhotoresponsive properties of ultrathin silicon nanowiresPhoton-trapping microstructures enable high-speed high-efficiency silicon photodiodesNanostructured Materials and Architectures for Advanced Infrared PhotodetectionVisible light-gated reconfigurable rotary actuation of electric nanomotors
P2860
Q30466597-31E299D8-21C6-46CE-B8F5-6B9866316431Q33464158-14EDDC38-6A4A-4A97-81D8-3F9AAB99ECB8Q34447622-E191CD26-90C6-46F7-A59B-36CD82A9C09AQ35370510-91788A35-F296-4864-A3C7-51BD90F8932EQ37403205-B50870A4-73E3-43EA-B5F2-E05890AB35C5Q37522532-21E99420-17EE-4C98-80A9-3524D83D531DQ42085034-C3E2F0F7-3937-4455-9F3A-FCF980DFB667Q47686167-9D551C9B-F3DF-4F07-A218-FE02D2110B83Q50736405-6C15E911-8AB1-4D7E-BFC1-A10484C98CD5Q50893133-8A1E7A7F-315A-4927-A11C-3B874855A8B0Q51076868-3CE4F840-7010-4C15-8F06-A1C3959E5E41Q51226516-6CAD60D1-7E2A-4E1D-92F5-82640BC40612Q53098279-D282E141-9296-47F1-AC05-69BF9F39E3A9Q53151774-90F9DCF8-CC29-451E-9B60-94D50E987683Q53442518-DCDBE4CA-B1E3-411B-8169-D22191DD7322Q54958898-5A0A79D9-12E8-4B8F-9060-440340F258F2Q57377784-01EA1FF3-59CF-4946-88F6-3FC92FAEA5D9Q57377792-9A21E2E9-3367-48BD-AD74-55B8DDB792EAQ58058844-F5780EE2-8245-4845-AB9D-4DA9037E5184Q58196719-86411EAD-7348-42C4-8594-D67529A77E60Q58202220-CECC40D6-0864-47EB-8E7B-A8BF455CC1C8Q58740455-B753D6DF-8BF3-42AC-9FC2-E7B71D1808DC
P2860
Ultrahigh responsivity visible and infrared detection using silicon nanowire phototransistors.
description
2010 nî lūn-bûn
@nan
2010年の論文
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2010年学术文章
@wuu
2010年学术文章
@zh-cn
2010年学术文章
@zh-hans
2010年学术文章
@zh-my
2010年学术文章
@zh-sg
2010年學術文章
@yue
2010年學術文章
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2010年學術文章
@zh-hant
name
Ultrahigh responsivity visible ...... con nanowire phototransistors.
@en
Ultrahigh responsivity visible ...... con nanowire phototransistors.
@nl
type
label
Ultrahigh responsivity visible ...... con nanowire phototransistors.
@en
Ultrahigh responsivity visible ...... con nanowire phototransistors.
@nl
prefLabel
Ultrahigh responsivity visible ...... con nanowire phototransistors.
@en
Ultrahigh responsivity visible ...... con nanowire phototransistors.
@nl
P2093
P356
P1433
P1476
Ultrahigh responsivity visible ...... con nanowire phototransistors.
@en
P2093
Arthur Zhang
Hongkwon Kim
James Cheng
P304
P356
10.1021/NL1006432
P407
P577
2010-06-01T00:00:00Z