Self-aligned fabrication of graphene RF transistors with T-shaped gate.
about
Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors.Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax.Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency PerformanceGraphene: an emerging electronic material.
P2860
Self-aligned fabrication of graphene RF transistors with T-shaped gate.
description
2012 nî lūn-bûn
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2012年の論文
@ja
2012年学术文章
@wuu
2012年学术文章
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2012年学术文章
@zh-cn
2012年学术文章
@zh-hans
2012年学术文章
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2012年学术文章
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2012年學術文章
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2012年學術文章
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name
Self-aligned fabrication of graphene RF transistors with T-shaped gate.
@en
Self-aligned fabrication of graphene RF transistors with T-shaped gate.
@nl
type
label
Self-aligned fabrication of graphene RF transistors with T-shaped gate.
@en
Self-aligned fabrication of graphene RF transistors with T-shaped gate.
@nl
prefLabel
Self-aligned fabrication of graphene RF transistors with T-shaped gate.
@en
Self-aligned fabrication of graphene RF transistors with T-shaped gate.
@nl
P2093
P356
P1433
P1476
Self-aligned fabrication of graphene RF transistors with T-shaped gate.
@en
P2093
Alexander Badmaev
Chuan Wang
P304
P356
10.1021/NN300393C
P407
P50
P577
2012-03-20T00:00:00Z