Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.
about
Indium Antimonide Nanowires: Synthesis and PropertiesEvolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range.Dislocation-driven growth of porous CdSe nanorods from CdSe·(ethylenediamine)(0.5) nanorods.Type I band alignment in GaAs81Sb19/GaAs core-shell nanowiresLong-lived excitons in GaN/AlN nanowire heterostructures
P2860
Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh
2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
2014年學術文章
@zh-hant
name
Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.
@en
Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.
@nl
type
label
Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.
@en
Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.
@nl
prefLabel
Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.
@en
Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.
@nl
P50
P356
P1433
P1476
Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.
@en
P304
P356
10.1021/NL503273J
P407
P577
2014-10-28T00:00:00Z