Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step.
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Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.Unipolar memristive switching in bulk negative temperature coefficient thermosensitive ceramics.Atomic switches: atomic-movement-controlled nanodevices for new types of computingAtomic switch: atom/ion movement controlled devices for beyond von-neumann computers.Single-Readout High-Density Memristor Crossbar.Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly.Seamlessly fused digital-analogue reconfigurable computing using memristors.Regenerable resistive switching in silicon oxide based nanojunctionsEffect of Electrode Roughness on Electroforming inHfO2and Defect-Induced Moderation of Electric-Field Enhancement
P2860
Q30842442-DF2C8488-524F-4723-BCBF-A64BB7626326Q34530318-86050A68-3F00-485E-9900-345847C5E4DCQ35047448-FAC6421A-D6B2-4242-A948-B8B7F3EC3A1DQ37386465-2E6B9765-4487-4296-A71B-3C1B55DAB41BQ37944504-A3220429-5D6C-492B-AFBA-0D7E783EDE52Q38923817-DB9173A2-73A9-4340-BF01-313464FEE077Q43487204-A1DA0D9E-2FB4-457C-BC94-47F9DDADFD31Q55291730-8C3F7CE6-7EDC-4C7F-9717-9857ECA0FDC2Q56982293-66E4937A-D72C-4FA9-BF09-A05ECBFC78CFQ57932976-9DE8FDD2-3F2D-4BC1-8423-85524A2E1670
P2860
Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step.
description
2010 nî lūn-bûn
@nan
2010年の論文
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2010年学术文章
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2010年学术文章
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2010年学术文章
@zh-cn
2010年学术文章
@zh-hans
2010年学术文章
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2010年學術文章
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name
Self-aligned memristor cross-p ...... nanoimprint lithography step.
@en
Self-aligned memristor cross-p ...... nanoimprint lithography step.
@nl
type
label
Self-aligned memristor cross-p ...... nanoimprint lithography step.
@en
Self-aligned memristor cross-p ...... nanoimprint lithography step.
@nl
prefLabel
Self-aligned memristor cross-p ...... nanoimprint lithography step.
@en
Self-aligned memristor cross-p ...... nanoimprint lithography step.
@nl
P2093
P356
P1433
P1476
Self-aligned memristor cross-p ...... nanoimprint lithography step.
@en
P2093
J Joshua Yang
Qiangfei Xia
P304
P356
10.1021/NL1017157
P407
P577
2010-08-01T00:00:00Z