Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

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Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides

P2860

Q58762040-795DF707-90F7-4DE1-82F6-A3A268FB4A27

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Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

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Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

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Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

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Item

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Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

@en

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

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Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

@en

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

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P1476

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

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P2093

Ioannis E Fragkos

http://www.w3.org/2001/XMLSchema#string

Nelson Tansu

http://www.w3.org/2001/XMLSchema#string

Volkmar Dierolf

http://www.w3.org/2001/XMLSchema#string

Yasufumi Fujiwara

http://www.w3.org/2001/XMLSchema#string

P2860

A GaN bulk crystal with improved structural quality grown by the ammonothermal method.

Optical excitation and external photoluminescence quantum efficiency of Eu³⁺ in GaN

Surface-plasmon-enhanced light emitters based on InGaN quantum wells.

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes.

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Recent developments in rare-earth doped materials for optoelectronics

P2888

s41598-017-17033-6

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16773

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scholarly article

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10.1038/S41598-017-17033-6

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English

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http://www.w3.org/2001/XMLSchema#string

P478

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2017-12-01T00:00:00Z

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29196749

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5711846

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Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

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P2860

P2860

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

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type

label

prefLabel

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P433

P478

P577

P698

P932

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P433

P478

P577

P698

P932