High-temperature stability of silicon carbide nanowires.
about
Mathematical and numerical model to study two-dimensional free flow isoelectric focusing.Dynamic computer simulations of electrophoresis: three decades of active research.In situ observation of nanotwins formation through twin terrace growth in pulse electrodeposited Cu films.Efficient algorithm for simulation of isoelectric focusing.Highly flexible, nonflammable and free-standing SiC nanowire paper.Steady-state protein focusing in carrier ampholyte based isoelectric focusing: Part I-Analytical solution.
P2860
High-temperature stability of silicon carbide nanowires.
description
2008 nî lūn-bûn
@nan
2008年の論文
@ja
2008年学术文章
@wuu
2008年学术文章
@zh
2008年学术文章
@zh-cn
2008年学术文章
@zh-hans
2008年学术文章
@zh-my
2008年学术文章
@zh-sg
2008年學術文章
@yue
2008年學術文章
@zh-hant
name
High-temperature stability of silicon carbide nanowires.
@en
High-temperature stability of silicon carbide nanowires.
@nl
type
label
High-temperature stability of silicon carbide nanowires.
@en
High-temperature stability of silicon carbide nanowires.
@nl
prefLabel
High-temperature stability of silicon carbide nanowires.
@en
High-temperature stability of silicon carbide nanowires.
@nl
P2093
P356
P1476
High-temperature stability of silicon carbide nanowires.
@en
P2093
Hanchen Huang
Hyun Woo Shim
Jaron D Kuppers
P304
P356
10.1166/JNN.2008.452
P407
P577
2008-08-01T00:00:00Z