Controlled growth of ternary alloy nanowires using metalorganic chemical vapor deposition.
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Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires.Selective GaSb radial growth on crystal phase engineered InAs nanowires.Antimony Induced {112}A Faceted Triangular GaAs1−xSbx/InP Core/Shell Nanowires and Their Enhanced Optical QualityA Review on the Synthesis Methods of CdSeS-Based Nanostructures
P2860
Controlled growth of ternary alloy nanowires using metalorganic chemical vapor deposition.
description
2008 nî lūn-bûn
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2008年の論文
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2008年学术文章
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name
Controlled growth of ternary a ...... nic chemical vapor deposition.
@en
Controlled growth of ternary a ...... nic chemical vapor deposition.
@nl
type
label
Controlled growth of ternary a ...... nic chemical vapor deposition.
@en
Controlled growth of ternary a ...... nic chemical vapor deposition.
@nl
prefLabel
Controlled growth of ternary a ...... nic chemical vapor deposition.
@en
Controlled growth of ternary a ...... nic chemical vapor deposition.
@nl
P2093
P356
P1433
P1476
Controlled growth of ternary a ...... nic chemical vapor deposition.
@en
P2093
Megan M Brewster
Michael J Tambe
Silvija Gradecak
Sung K Lim
P304
P356
10.1021/NL080129N
P407
P577
2008-04-04T00:00:00Z