Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem.
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Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem.
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name
Organic Ferroelectric-Based 1T ...... ng the Half-Selection Problem.
@en
Organic Ferroelectric-Based 1T ...... ng the Half-Selection Problem.
@nl
type
label
Organic Ferroelectric-Based 1T ...... ng the Half-Selection Problem.
@en
Organic Ferroelectric-Based 1T ...... ng the Half-Selection Problem.
@nl
prefLabel
Organic Ferroelectric-Based 1T ...... ng the Half-Selection Problem.
@en
Organic Ferroelectric-Based 1T ...... ng the Half-Selection Problem.
@nl
P2093
P2860
P50
P356
P1433
P1476
Organic Ferroelectric-Based 1T ...... ing the Half-Selection Problem
@en
P2093
Hanlin Wang
Huanli Dong
Qiang Zhao
Rongjin Li
Xiaotao Zhang
Zhenjie Ni
P2860
P356
10.1002/ADMA.201701907
P407
P577
2017-07-10T00:00:00Z