Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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Strain-Tunable Electronic Properties and Band Alignments in GaTe/CN Heterostructure: a First-Principles Calculation

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Q58695839-14249443-1BDE-4478-936B-D9023A799391

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Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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P1476

Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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P2093

Chan Wang

http://www.w3.org/2001/XMLSchema#string

Jinyan Du

http://www.w3.org/2001/XMLSchema#string

Lei Peng

http://www.w3.org/2001/XMLSchema#string

Qi Qian

http://www.w3.org/2001/XMLSchema#string

Sufan Wang

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Tunable optical properties of multilayer black phosphorus thin films

Projector augmented-wave method

Special points for Brillouin-zone integrations

Phosphorene: an unexplored 2D semiconductor with a high hole mobility

Black phosphorus field-effect transistors

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides.

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure.

Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials.

P31

scholarly article

P356

10.1002/SMLL.201703536

http://www.w3.org/2001/XMLSchema#string

P50

Yucheng Huang

P577

2018-01-11T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

29323456

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Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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P2860

P2860

Tuning the Carrier Confinement in GeS/Phosphorene van der Waals Heterostructures.

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P1476

P2093

P2860

P31

P356

P50

P577

P698

P356

P1433

P1476

P2093

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P31

P356

P50

P577

P698