about
Nanofluidics in hollow nanowires.Growth mechanism of self-catalyzed group III-V nanowires.Direct imaging of the atomic structure inside a nanowire by scanning tunnelling microscopy.Probing of individual semiconductor nanowhiskers by TEM-STM.Solid-phase diffusion mechanism for GaAs nanowire growth.Epitaxial integration of nanowires in microsystems by local micrometer-scale vapor-phase epitaxy.Nanowire biocompatibility in the brain--looking for a needle in a 3D stack.Probing strain in bent semiconductor nanowires with Raman spectroscopy.New flexible toolbox for nanomechanical measurements with extreme precision and at very high frequencies.Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires.Surface-enhanced Raman scattering of rhodamine 6G on nanowire arrays decorated with gold nanoparticles.Nanowire-based electrode for acute in vivo neural recordings in the brain.Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscopeSelf-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study.Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning.Electron trapping in InP nanowire FETs with stacking faults.A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditions.Crystal phase engineering in single InAs nanowires.Time-resolved photoluminescence investigations on HfO2-capped InP nanowires.The fabrication of dense and uniform InAs nanowire arrays.Measuring temperature gradients over nanometer length scales.Doping evaluation of InP nanowires for tandem junction solar cells.Tunneling anisotropic magnetoresistance in Co/AlOx/Au tunnel junctions.Structural properties of <111>B -oriented III-V nanowires.Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X-ray Beams.In situ characterization of nanowire dimensions and growth dynamics by optical reflectance.A comparative study of absorption in vertically and laterally oriented InP core-shell nanowire photovoltaic devices.Branched nanotrees with immobilized acetylcholine esterase for nanobiosensor applications.Control and understanding of kink formation in InAs-InP heterostructure nanowires.InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit.Magnetic polarons and large negative magnetoresistance in GaAs nanowires implanted with Mn ions.Optical far-field method with subwavelength accuracy for the determination of nanostructure dimensions in large-area samples.Fluorescent nanowire heterostructures as a versatile tool for biology applications.Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors.Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires.Semiconductor-oxide heterostructured nanowires using postgrowth oxidation.Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.Electrical and optical properties of InP nanowire ensemble p⁺-i-n⁺ photodetectors.Self-Seeded Axio-Radial InAs-InAs1-xPx Nanowire Heterostructures beyond "Common" VLS Growth.Height-controlled nanowire branches on nanotrees using a polymer mask.
P50
Q30484442-758A04B8-14AF-496B-BB54-A9AC9A98EC5FQ30498001-25559D4E-955C-4DDA-9E36-6BCD1942960BQ31088095-D45B543C-808F-42AD-8B27-74A62767DFD4Q33205801-A2982CFB-D805-4269-BF8E-A35C5520654AQ33206966-71BEF2DA-56F9-4B4D-9D2A-1F720BD68911Q33372174-110C1628-0770-4C44-BC0F-3388644FDFB1Q33511635-FE9934A3-6FFE-48D4-AF4E-4CD588CB9D62Q33535328-708EBE20-23E3-44ED-8641-72EE6F72BA8EQ33675264-74035FEC-1735-439B-8F94-E7668FA4C61BQ33852850-EFD48BDC-9AE9-436A-BA99-19250BA16D8CQ33987157-C4043332-0406-415F-9984-02CC1A4C4D3CQ34595143-B0081BC6-3897-4149-9C3F-6A80B21FC769Q34995410-264A583F-A8AA-412F-AA72-3C13745885C2Q38679191-650602AC-B269-41D9-841C-2CD46A7A7558Q39258223-79F5A992-A971-4B5C-A297-9653BF6C54B9Q39678130-90C1C268-BBFE-4753-957C-711639BDC191Q39716761-2967DEED-C2B7-4C50-A69D-97C3A93CC647Q39847929-2D001727-664A-4B88-8993-BF52C429D4FFQ39900506-016C8249-0D27-4B96-A29C-6D35BA4D84C4Q39980560-137BD072-D747-438E-945F-A0C2D5DA3DEFQ40008762-7667FF0B-55AF-4451-ADD0-7A052E7942B1Q40112403-802D8B2E-565F-4933-8715-CB6E81FF9D58Q40126399-7CD5D393-4D8D-4194-80F3-55E59E08523DQ40314711-19C15AB7-5DCA-444F-A3CD-B68DE4FE06F2Q40820607-B5033277-39D4-4BF3-B060-A6A393314A75Q41166118-D7B1451B-07A2-4615-A7D0-5A513A611BF1Q41450705-3C38062F-5736-404D-8EE1-158A4B038A39Q43214418-E1DF41F3-A57F-4AEA-8F58-3DE6F986671BQ43584440-4AEEEEB8-C866-44B2-903A-D68666BEB25CQ44629622-734B648D-5CB8-4812-A2BA-6AC8A9118320Q44931971-809A7F71-18FD-4FF2-898C-8325EC4C3C58Q45209024-D61FACD8-DDBD-4907-99E2-8B7FEEBAEFB8Q45215235-F86598D0-A189-420B-8B93-1CA12F608DDDQ45365602-4659BDD6-8DA0-43B6-8CCF-FBD0265FEAD3Q45927505-5182AB1B-467B-49D6-837C-CCB7C5232887Q46186584-0F8B3A28-71F9-4762-BDF1-759871A4E4D0Q46217121-96B29ACE-F642-4078-AAB2-7DAB1A3D6A04Q46629369-362E308B-03BA-4D72-A7E4-C0A791B21E8EQ47234972-E7875755-87A9-4CE8-B8DF-92D1DB950E38Q47305119-E749621E-9704-4A56-9DE5-D4F57D384924
P50
description
Zweeds onderzoeker
@nl
hulumtues
@sq
researcher
@en
taighdeoir
@ga
հետազոտող
@hy
name
Lars Samuelson
@ast
Lars Samuelson
@en
Lars Samuelson
@es
Lars Samuelson
@ga
Lars Samuelson
@nl
Lars Samuelson
@sl
Lars Samuelson
@sq
type
label
Lars Samuelson
@ast
Lars Samuelson
@en
Lars Samuelson
@es
Lars Samuelson
@ga
Lars Samuelson
@nl
Lars Samuelson
@sl
Lars Samuelson
@sq
prefLabel
Lars Samuelson
@ast
Lars Samuelson
@en
Lars Samuelson
@es
Lars Samuelson
@ga
Lars Samuelson
@nl
Lars Samuelson
@sl
Lars Samuelson
@sq
P106
P21
P27
P31
P496
0000-0003-1971-9894
P569
2000-01-01T00:00:00Z