Ultrafast Electronic Band Gap Control in an Excitonic Insulator.

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Photoinduced Enhancement of Excitonic Order.Coherent order parameter oscillations in the ground state of the excitonic insulator Ta2NiSe5.Prolonged photo-carriers generated in a massive-and-anisotropic Dirac material.Photo-induced semimetallic states realised in electron-hole coupled insulators

P2860

Q49495613-F8495C84-C008-4C25-9B74-C70DCA77525B Q55174856-1D2A0548-D131-432B-942A-83602A2EB53D Q55311631-8535E6F4-B16F-420D-BAB0-8B703279EAE5 Q58547114-B13959D8-1FA2-4593-9CAD-CF6BBCEB21AA

P2860

Ultrafast Electronic Band Gap Control in an Excitonic Insulator.

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http://www.wikidata.org/entity/Q49790001

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2017 nî lūn-bûn

@nan

2017年の論文

@ja

2017年学术文章

@wuu

2017年学术文章

@zh

2017年学术文章

@zh-cn

2017年学术文章

@zh-hans

2017年学术文章

@zh-my

2017年学术文章

@zh-sg

2017年學術文章

@yue

2017年學術文章

@zh-hant

name

Ultrafast Electronic Band Gap Control in an Excitonic Insulator.

@en

Ultrafast Electronic Band Gap Control in an Excitonic Insulator.

@nl

type

Item

label

Ultrafast Electronic Band Gap Control in an Excitonic Insulator.

@en

Ultrafast Electronic Band Gap Control in an Excitonic Insulator.

@nl

prefLabel

Ultrafast Electronic Band Gap Control in an Excitonic Insulator.

@en

Ultrafast Electronic Band Gap Control in an Excitonic Insulator.

@nl

P1476

Ultrafast Electronic Band Gap Control in an Excitonic Insulator

@en

P2093

Claude Monney

http://www.w3.org/2001/XMLSchema#string

Denis Golež

http://www.w3.org/2001/XMLSchema#string

Hide Takagi

http://www.w3.org/2001/XMLSchema#string

Marc Herzog

http://www.w3.org/2001/XMLSchema#string

Martin Eckstein

http://www.w3.org/2001/XMLSchema#string

Naoyuki Katayama

http://www.w3.org/2001/XMLSchema#string

Philipp Werner

http://www.w3.org/2001/XMLSchema#string

Selene Mor

http://www.w3.org/2001/XMLSchema#string

P2860

Photoinduced π-π* band gap renormalization in graphite.

Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5.

Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2.

Instantaneous band gap collapse in photoexcited monoclinic VO2 due to photocarrier doping.

Physical and structural properties of the new layered compounds Ta2NiS5 and Ta2NiSe5

First-principles self-energy calculations of carrier-induced band-gap narrowing in silicon

Collapse of long-range charge order tracked by time-resolved photoemission at high momenta

P304

086401

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1103/PHYSREVLETT.119.086401

http://www.w3.org/2001/XMLSchema#string

P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

119

http://www.w3.org/2001/XMLSchema#string

P50

Minoru Nohara

Julia Stähler

Takashi Mizokawa

P577

2017-08-23T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

28952776

http://www.w3.org/2001/XMLSchema#string

P818

1608.05586

http://www.w3.org/2001/XMLSchema#string

Ultrafast Electronic Band Gap Control in an Excitonic Insulator.

about

P2860

P2860

Ultrafast Electronic Band Gap Control in an Excitonic Insulator.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P698

P818

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P698

P818