Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2 /MoS2 Dichalcogenide Heterojunction.
about
Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applicationsHomogeneous 2D MoTe2 p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping.Recent progress in van der Waals heterojunctions.Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form.Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.Thermodynamically Stable Synthesis of Large-Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n-n Heterojunction Devices.Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions.P-GaSe/N-MoS2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation.Broadband ultrafast photovoltaic detectors based on large-scale topological insulator Sb2Te3/STO heterostructures.Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.Photodetectors Based on Two-Dimensional Layered Materials Beyond GrapheneFast High-Responsivity Few-Layer MoTe2PhotodetectorsConversion of Multi-layered MoTe Transistor Between P-Type and N-Type and Their Use in Inverter
P2860
Q33866946-6147C794-04DA-44E8-9D8E-97068E315DA0Q38674334-384E9B99-3957-4AF2-B2CF-CA4FEC23DF52Q38743041-F43ABCE5-62D7-4419-ABBB-1BA719D757F2Q46062170-5FE2F797-177C-461E-84B9-C2F5F5E0BB4EQ47118422-22E76F37-DB67-4784-A6E2-291E90794319Q47133679-E19C764F-71F3-438D-BB71-7DE71A708FF9Q47941473-7D6EF9DE-595F-4297-B098-729143C52619Q48033619-B845924D-6820-4073-BE76-95B5284E0A56Q48272029-324B2ACA-6368-404B-8CFC-C305EFEF0EA5Q50652654-8893AB29-CA05-43B4-BE13-1AA466C865E1Q50928441-7CF322AB-290D-402D-8D36-A159F6C729E7Q57344058-A14B0234-DB77-4E65-83BF-A31986113BE3Q57915548-ED809D5A-7BDD-4CD4-A625-0F968AB79AA4Q58707074-5BD8C3D2-E46B-497E-974D-D7978B435987
P2860
Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2 /MoS2 Dichalcogenide Heterojunction.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年学术文章
@wuu
2016年学术文章
@zh
2016年学术文章
@zh-cn
2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
@yue
2016年學術文章
@zh-hant
name
Electric and Photovoltaic Beha ...... Dichalcogenide Heterojunction.
@en
Electric and Photovoltaic Beha ...... Dichalcogenide Heterojunction.
@nl
type
label
Electric and Photovoltaic Beha ...... Dichalcogenide Heterojunction.
@en
Electric and Photovoltaic Beha ...... Dichalcogenide Heterojunction.
@nl
prefLabel
Electric and Photovoltaic Beha ...... Dichalcogenide Heterojunction.
@en
Electric and Photovoltaic Beha ...... Dichalcogenide Heterojunction.
@nl
P2093
P2860
P356
P1433
P1476
Electric and Photovoltaic Beha ...... Dichalcogenide Heterojunction.
@en
P2093
Atiye Pezeshki
Kyunghwan Oh
Seongil Im
Seyed Hossein Hosseini Shokouh
Tavakol Nazari
P2860
P304
P356
10.1002/ADMA.201504090
P407
P577
2016-02-29T00:00:00Z