Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.
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Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.
description
2014 nî lūn-bûn
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2014年の論文
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2014年学术文章
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2014年学术文章
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2014年學術文章
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name
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.
@en
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.
@nl
type
label
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.
@en
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.
@nl
prefLabel
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.
@en
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.
@nl
P2093
P50
P356
P1433
P1476
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.
@en
P2093
P304
P356
10.1021/NL5002247
P407
P577
2014-02-18T00:00:00Z