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Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells.Relaxation Oscillations and Ultrafast Emission Pulses in a Disordered Expanding Polariton Condensate.Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well.Controlled synthesis of tuned bandgap nanodimensional alloys of PbS(x)Se(1-x).Carrier dynamics in type-II GaAsSb/GaAs quantum wells.Ghost Branch Photoluminescence From a Polariton Fluid Under Nonresonant Excitation.Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μmControl of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting LasersConfinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kineticsLateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well systemCarrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emissionExciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μmSingle-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 KRoom Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral RangeSingle photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructuresMagnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μmInfluence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral regionSingle photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dashCarrier Dynamics and Dynamic Band-Bending in Type-II ZnTe/ZnSe Quantum DotsCarrier relaxation dynamics in InAs/GaInAsP/InP(001) quantum dashes emitting near 1.55 μmExciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μmImpact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dotsProperties of InGaAlAs/AlGaAs quantum dots for single photon emission in the near infrared and visible spectral rangeTime Resolved Photoluminescence Study of the Wide (Cd,Mn)Te/(Cd,Mg)Te Quantum WellDynamics of localized excitons in Ga0.69In0.31N0.015As0.985/GaAs quantum well: Experimental studies and Monte-Carlo simulationsElectron and hole spins in InP/(Ga,In)P self-assembled quantum dotsInfluence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well systemInfluence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atomsSingle photon emission in the red spectral range from a GaAs-based self-assembled quantum dotTime-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD—antimony surfactant effectCarrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wellsCarrier transfer in the GaAs-based tunnel injection quantum well-quantum dots structuresContactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiationErratum: Long-lived electron spin coherence in CdSe/Zn(S,Se) self-assembled quantum dots [Phys. Rev. B84, 085304 (2011)]Growth and characterization of InGaN for photovoltaic devicesImpact of the localized wetting layer states on carrier relaxation processes in GaAs-based quantum dash structuresInfluence of Pressure-Induced Transition from Nanocrystals to Nanoceramic Form on Optical Properties of Ce-Doped Y3Al5O12Long-lived electron spin coherence in CdSe/Zn(S,Se) self-assembled quantum dotsOptically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxyTheoretical simulations of radiative recombination time in polar InGaN quantum wells
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Q37616645-46CE4B33-244F-4A74-A91E-939546A88204Q38645864-A21C611B-15AD-4C1C-9707-CCA04124E175Q43548431-835BA641-218F-4D08-9BC2-34F897510A33Q50542163-587D64D2-F6CA-40D6-95A9-D6523E9EE7EDQ51387024-36CA982F-7750-4F35-AB2A-0C53FDC6453BQ53285159-5F4455C4-CADE-4658-9B4D-FAF27C63BCF6Q59244241-A1F25FA7-50DB-4B51-8E53-3F77DD4855A7Q59244242-C71AA132-5300-4C96-92E8-6CA594427CABQ59244244-BED3713F-8B49-4CAE-8D84-3E048A33356FQ59244245-BFF85F7D-6FE6-4F65-A1F0-7DD540DAC091Q59244246-426FAC84-3B78-41B8-A938-A1E057524E72Q59244247-85B94EC8-97AE-4901-8AF8-BED76A3CDADDQ59244249-B5394BA6-6723-4C17-919E-630750942510Q59244250-CCB90085-0B8D-47E1-85B3-DDE539287854Q59244253-DE10DB4F-3ED2-4DD9-84B5-90904EDB4950Q59244254-172A89D1-61D3-46B1-852D-4EFD5B1FD81EQ59244255-F3EF642C-E443-4101-B7E4-FF05DD1A49C5Q59244257-98BE4C10-91FC-4341-AC3E-616F567447F9Q59244258-0767EA1F-683A-4867-B95F-1E49F3BB5087Q59244260-49434999-3772-466F-975E-3C6BB157E848Q59244261-93F2C3DA-4F39-4742-B784-BB7E6D46F4F4Q59244262-C4876C09-2F5B-438A-92BF-D844CC444A87Q59244263-C8C2C0FA-C62B-4B5A-BED7-544F3449362EQ59244265-6358E48D-3E92-4E9F-9AAC-519DEA676D18Q59244266-10F68CD4-F286-4554-8463-7B2694C6AF44Q59244267-B41B6F77-C157-4FAE-994F-A0E0D0C90D9EQ59244269-BA87F7E1-7295-4319-80F7-8603574534E2Q59244270-CEC0FBA5-037B-4FB1-AA74-49BD3167CC3AQ59244272-DCFCA698-507D-4A24-96E3-D80853DE7FCDQ59244274-8D42ADEE-FCEC-40E8-9308-5311D809D612Q59244275-59B35107-C05D-45D0-B766-13CC05042E64Q59244277-BD01B2D1-8625-4D12-9178-D5E704FF0320Q59244278-591AAEE6-2E93-4121-A91C-C1E4707F3466Q59244280-7ECDDC15-07DA-4059-96DB-2B430C381435Q59244281-AD536AB0-6507-428E-A0AA-8A04811A9138Q59244282-B2FDF73B-63F3-4744-8E0E-38FB4F0D0D96Q59244283-A38EF555-A05C-44FE-8489-AFF81F754005Q59244284-16BF2027-F3B2-4B44-B2A9-5E325A8662FCQ59244285-C3047D29-1DA4-4C60-AE36-2F9B079E9739Q59244286-E0AD686E-032B-4026-9E99-1909EB160EDA
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description
hulumtues
@sq
natuurkundige
@nl
researcher
@en
ricercatore
@it
հետազոտող
@hy
name
Marcin Syperek
@ast
Marcin Syperek
@en
Marcin Syperek
@es
Marcin Syperek
@nl
Marcin Syperek
@sl
type
label
Marcin Syperek
@ast
Marcin Syperek
@en
Marcin Syperek
@es
Marcin Syperek
@nl
Marcin Syperek
@sl
prefLabel
Marcin Syperek
@ast
Marcin Syperek
@en
Marcin Syperek
@es
Marcin Syperek
@nl
Marcin Syperek
@sl
P227
P1153
6507270884
P21
P214
95145304391878571912
P227
112494740X
P31
P496
0000-0002-5260-7360
P735
P7859
viaf-95145304391878571912