Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

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Scaled down glass transition temperature in confined polymer nanofibers.

P2860

Q48046845-F6DB0F73-5878-46D1-9E8E-31A9FE0C7421

P2860

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

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2016 nî lūn-bûn

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2016年の論文

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2016年学术文章

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2016年学术文章

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2016年学术文章

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2016年学术文章

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2016年学术文章

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2016年学术文章

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2016年學術文章

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2016年學術文章

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Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

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Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

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Item

label

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

@en

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

@nl

prefLabel

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

@en

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

@nl

P1476

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

@en

P2093

Albert J J M van Breemen

http://www.w3.org/2001/XMLSchema#string

Alessio Marrani

http://www.w3.org/2001/XMLSchema#string

Bernard Nysten

http://www.w3.org/2001/XMLSchema#string

Christian Ruzié

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Gerwin H Gelinck

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Hailu G Kassa

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Rachid Haouari

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Yves H Geerts

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P2860

Local Maps of the Polarization and Depolarization in Organic Ferroelectric Field-Effect Transistors

Simple, Inexpensive, and Rapid Approach to Fabricate Cross-Shaped Memristors Using an Inorganic-Nanowire-Digital-Alignment Technique and a One-Step Reduction Process.

Above-bandgap voltages from ferroelectric photovoltaic devices.

Large-scale organic nanowire lithography and electronics.

Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories.

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

Nanoscale design of multifunctional organic layers for low-power high-density memory devices.

FeTRAM. An organic ferroelectric material based novel random access memory cell.

Ferroelectric transistors with nanowire channel: toward nonvolatile memory applications.

Organic non-volatile memories from ferroelectric phase-separated blends.

P304

5968-5976

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P31

scholarly article

P356

10.1039/C6NR00049E

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P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

P577

2016-02-29T00:00:00Z

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P698

26927694

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P921

Erdieroale

nanowire

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

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P2860

P2860

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P698

P921

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P698

P921