Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine).
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Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend.A Novel Bat-Shaped Dicyanomethylene-4H-pyran-Functionalized Naphthalimide for Highly Efficient Solution-Processed Multilevel Memory Devices.Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene.Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor.Bistable electrical switching and nonvolatile memory effect in carbon nanotube-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) composite films.
P2860
Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine).
description
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Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly
@nl
Thermally-stable resistive swi ...... ieved in poly(triphenylamine).
@en
type
label
Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly
@nl
Thermally-stable resistive swi ...... ieved in poly(triphenylamine).
@en
prefLabel
Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly
@nl
Thermally-stable resistive swi ...... ieved in poly(triphenylamine).
@en
P2093
P2860
P356
P1476
Thermally-stable resistive swi ...... ieved in poly(triphenylamine).
@en
P2093
Cheng Wang
Hongwei Tan
Run-Wei Li
Wenbin Zhang
Wuhong Xue
Xiaojian Zhu
Xinxin Chen
P2860
P304
11856-11858
P356
10.1039/C4CC04696J
P407
P577
2014-10-01T00:00:00Z