Gate-induced insulating state in bilayer graphene devices.
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Electric-field controlled spin in bilayer triangular graphene quantum dotsBand Gap Engineering of Two-Dimensional Nitrogene.Sub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.Strain solitons and topological defects in bilayer grapheneCoexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene.Edge currents shunt the insulating bulk in gapped grapheneGrowth mechanism of graphene on graphene films grown by chemical vapor deposition.Efficient electrical control of thin-film black phosphorus bandgapA preparation approach of exploring cluster ion implantation: from ultra-thin carbon film to graphene.The evolution of electronic structure in few-layer graphene revealed by optical spectroscopyGraphene synthesis by ion implantation.Bilayer graphene. Chemical potential and quantum Hall ferromagnetism in bilayer graphene.Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary invertersGraphene structures at an extreme degree of buckling.Accessing the transport properties of graphene and its multilayers at high carrier density.Common-path interference and oscillatory Zener tunneling in bilayer graphene p-n junctions.Layer number identification of intrinsic and defective multilayered graphenes up to 100 layers by the Raman mode intensity from substrates.Anomalous spectral features of a neutral bilayer graphene.High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN filmsObservation of tunable electrical bandgap in large-area twisted bilayer graphene synthesized by chemical vapor deposition.Polaritons in layered two-dimensional materials.Extreme sensitivity of the electric-field-induced band gap to the electronic topological transition in sliding bilayer graphene.Ca intercalated bilayer graphene as a thinnest limit of superconducting C6Ca.Evidence for formation of multi-quantum dots in hydrogenated graphene.R6G molecule induced modulation of the optical properties of reduced graphene oxide nanosheets for use in ultrasensitive SPR sensing.Valley Chern numbers and boundary modes in gapped bilayer graphene.Bimodal behaviour of charge carriers in graphene induced by electric double layer.The aniline-to-azobenzene oxidation reaction on monolayer graphene or graphene oxide surfaces fabricated by benzoic acid.Renormalization group aspects of graphene.Re-ordering chaotic carbon: origins and application of textured carbon.Graphene and its derivatives: switching ON and OFF.Engineering the electronic structure of graphene.Graphene: an emerging electronic material.The edges of graphene.A review of carbon nanotube- and graphene-based flexible thin-film transistors.Phosphorene and Phosphorene-Based Materials - Prospects for Future Applications.Graphene homojunction: closed-edge bilayer graphene by pseudospin interaction.Gap state analysis in electric-field-induced band gap for bilayer graphene.Tuning the electronic transport properties of grapheme through functionalisation with fluorineBarrier inhomogeneities at vertically stacked graphene-based heterostructures.
P2860
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P2860
Gate-induced insulating state in bilayer graphene devices.
description
2007 nî lūn-bûn
@nan
2007年の論文
@ja
2007年学术文章
@wuu
2007年学术文章
@zh
2007年学术文章
@zh-cn
2007年学术文章
@zh-hans
2007年学术文章
@zh-my
2007年学术文章
@zh-sg
2007年學術文章
@yue
2007年學術文章
@zh-hant
name
Gate-induced insulating state in bilayer graphene devices.
@en
Gate-induced insulating state in bilayer graphene devices.
@nl
type
label
Gate-induced insulating state in bilayer graphene devices.
@en
Gate-induced insulating state in bilayer graphene devices.
@nl
prefLabel
Gate-induced insulating state in bilayer graphene devices.
@en
Gate-induced insulating state in bilayer graphene devices.
@nl
P2093
P356
P1433
P1476
Gate-induced insulating state in bilayer graphene devices.
@en
P2093
Alberto F Morpurgo
Hubert B Heersche
Jeroen B Oostinga
Lieven M K Vandersypen
Xinglan Liu
P2888
P304
P356
10.1038/NMAT2082
P407
P577
2007-12-02T00:00:00Z