Tunable, ultralow-power switching in memristive devices enabled by a heterogeneous graphene-oxide interface.
about
Resistive Switching of Plasma-Treated Zinc Oxide Nanowires for Resistive Random Access Memory.Resistive Switching Memory Devices Based on Proteins.An artificial nociceptor based on a diffusive memristor.Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin.In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device.Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
P2860
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P2860
Tunable, ultralow-power switching in memristive devices enabled by a heterogeneous graphene-oxide interface.
description
2014 nî lūn-bûn
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2014年の論文
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2014年学术文章
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name
Tunable, ultralow-power switch ...... eous graphene-oxide interface.
@en
Tunable, ultralow-power switch ...... eous graphene-oxide interface.
@nl
type
label
Tunable, ultralow-power switch ...... eous graphene-oxide interface.
@en
Tunable, ultralow-power switch ...... eous graphene-oxide interface.
@nl
prefLabel
Tunable, ultralow-power switch ...... eous graphene-oxide interface.
@en
Tunable, ultralow-power switch ...... eous graphene-oxide interface.
@nl
P2093
P2860
P50
P356
P1433
P1476
Tunable, ultralow-power switch ...... eous graphene-oxide interface.
@en
P2093
P2860
P304
P356
10.1002/ADMA.201306028
P407
P577
2014-02-13T00:00:00Z