about
Non-volatile memory based on the ferroelectric photovoltaic effectCdS sensitized 3D hierarchical TiO2/ZnO heterostructure for efficient solar energy conversion.Giant photostriction in organic-inorganic lead halide perovskites.General route to ZnO nanorod arrays on conducting substrates via galvanic-cell-based approachRoom-temperature ferroelectricity in CuInP2S6 ultrathin flakesUniversal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films.Characterization and manipulation of mixed phase nanodomains in highly strained BiFeO3 thin films.β-Phase poly(vinylidene fluoride) films encouraged more homogeneous cell distribution and more significant deposition of fibronectin towards the cell-material interface compared to α-phase poly(vinylidene fluoride) films.Ultrafast electron-phonon coupling and photo-induced strain in the morphotropic phase boundary of BixDy1-xFeO3 films.Mechanism of polarization fatigue in BiFeO3.Self-assembled single-crystal ferromagnetic iron nanowires formed by decomposition.Enhancing ferroelectric photovoltaic effect by polar order engineering.Response to Comment on "Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures"Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistorEffective doping of single-layer graphene from underlyingSiO2substratesIllumination-Enhanced Hysteresis of Transistors Based on Carbon Nanotube NetworksStudy of Charge Diffusion at the Carbon Nanotube−SiO2 Interface by Electrostatic Force MicroscopyCharge injection at carbon nanotube-SiO2 interfaceN-type behavior of ferroelectric-gate carbon nanotube network transistorPhotoconductivity from Carbon Nanotube Transistors Activated by Photosensitive PolymersToward High-Performance Solution-Processed Carbon Nanotube Network Transistors by Removing Nanotube BundlesWork function engineering of electrodes via electropolymerization of ethylenedioxythiophenes and its derivativesIn-Plane Ferroelectricity in Thin Flakes of Van der Waals Hybrid PerovskiteAll-Carbon Electronic Devices Fabricated by Directly Grown Single-Walled Carbon Nanotubes on Reduced Graphene Oxide ElectrodesGrowth, crystal structure, and properties of epitaxial BiScO3 thin filmsOxygen vacancy motion in Er-doped barium strontium titanate thin filmsLow-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealingOrigin of giant negative piezoelectricity in a layered van der Waals ferroelectricNonvolatile Resistive Switching inPt/LaAlO3/SrTiO3HeterostructuresLow-Symmetry Monoclinic Phases and Polarization Rotation Path Mediated by Epitaxial Strain in Multiferroic BiFeO3 Thin FilmsUniaxial Magnetic Anisotropy in La0.7Sr0.3MnO3 Thin Films Induced by Multiferroic BiFeO3 with Striped Ferroelectric DomainsAbnormal Poisson's ratio and linear compressibility in perovskite materialsVan der Waals negative capacitance transistorsContinuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect
P50
Q30452261-E7262704-AF11-48AD-A77A-25E2B7BF2E16Q33912580-DC941AF7-35A1-4D15-BBB8-1AA995863FA2Q36768828-6688A34D-7935-487B-9F2F-F816744BC6EFQ37094341-CC907CF6-A85B-497B-95FA-DEE2F6125295Q37181250-9AA2A823-C131-4490-A2D0-27CB18284DDCQ37720530-8F6D0F3E-0640-4430-B40D-B8BBDD8F6D70Q39616922-252A67B6-8CA2-45AC-922E-854E825B0683Q43490542-122A7848-75FF-4B94-B3F3-E6D28B3F5563Q49830933-4258E187-D7D7-4816-BBD2-66AD9C76BFE3Q50938471-8DF911B9-3FEB-4EB3-82A7-49F15F03343AQ51641139-DACA0CBB-FF39-4786-8922-6DD12BA9EBA9Q55453472-657EBBF9-3674-4280-922B-EBBDB8303318Q56994363-1D772D3B-FCE3-4A68-83E7-87DE657C4F6CQ57760050-C1F81EDF-9CEE-4B9F-945D-BC8C7DA61DC6Q57760151-0F7AE562-FC81-44A2-BA94-EDF00E30F5C2Q57760173-FCC0F560-C7FC-4903-83C6-3FB12A5E0573Q57760184-AB9D515C-E093-4013-8232-C22E45CCBB08Q57760194-66809C23-2CB0-4064-95C9-80FE88F5FEC6Q57760216-51752856-70D2-466A-810E-E35102A59993Q57760222-F4950FCB-32D2-4103-8D24-B3E591FADCB1Q57760235-BE4317EB-91F9-490A-92F8-BD84C6E636B8Q57760239-9A164524-5624-4181-B8D4-D789A33CC77DQ58604410-05049D0C-3E8F-48CF-B93E-C7F0C28335A2Q58654798-8CBF9B0C-337B-41C8-AE6D-95DF8252BAB0Q60290318-221B9C83-D25F-406D-8777-D20B89884B59Q60290452-4DE3C0EF-8E8E-4FF3-86CD-4F5EB3FE889DQ60290493-8526AB5F-AD00-4EF2-B3C2-8B0C93673C87Q64101298-8EE12DD4-21FA-4EA2-9C51-6889653344E7Q64218784-59727D0B-6971-4E6F-BF99-C2C773856B3AQ64218805-AF7568B2-6630-402E-BE37-B4351DCFB3E3Q64218815-04B84B57-F1EA-4D81-80D0-4C69A7338A40Q84091610-F870D307-7DF4-4CC3-8545-654E78FA2209Q91776472-D43D6F72-3E67-4440-8EA9-0A5175DF1A69Q95660267-FE6310BF-D4AA-4DB6-ABAF-2D06C840C38E
P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Junling Wang
@ast
Junling Wang
@en
Junling Wang
@es
Junling Wang
@nl
Junling Wang
@sl
type
label
Junling Wang
@ast
Junling Wang
@en
Junling Wang
@es
Junling Wang
@nl
Junling Wang
@sl
prefLabel
Junling Wang
@ast
Junling Wang
@en
Junling Wang
@es
Junling Wang
@nl
Junling Wang
@sl
P244
P5361
P106
P214
719146461614227732195
P244
no2016065945
P31
P496
0000-0003-3663-7081
P5361
WangJunling1978-
P7859
lccn-no2016065945