Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

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Intramolecular Locked Dithioalkylbithiophene-Based Semiconductors for High-Performance Organic Field-Effect Transistors.Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors.

P2860

Q38679401-53DBC2B1-0013-445E-A2F4-6FEFA08FF9CA Q41360819-74DB8574-EFAF-4502-9F12-7804FC2FC180

P2860

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

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http://www.wikidata.org/entity/Q51003857

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2017 nî lūn-bûn

@nan

2017年の論文

@ja

2017年学术文章

@wuu

2017年学术文章

@zh

2017年学术文章

@zh-cn

2017年学术文章

@zh-hans

2017年学术文章

@zh-my

2017年学术文章

@zh-sg

2017年學術文章

@yue

2017年學術文章

@zh-hant

name

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

@en

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

@nl

type

Item

label

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

@en

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

@nl

prefLabel

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

@en

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

@nl

P1476

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

@en

P2093

Andrea Perinot

http://www.w3.org/2001/XMLSchema#string

Benjamin Nketia-Yawson

http://www.w3.org/2001/XMLSchema#string

Grace Dansoa Tabi

http://www.w3.org/2001/XMLSchema#string

Mario Caironi

http://www.w3.org/2001/XMLSchema#string

Seok-Ju Kang

http://www.w3.org/2001/XMLSchema#string

P2860

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A thienoisoindigo-naphthalene polymer with ultrahigh mobility of 14.4 cm(2)/V·s that substantially exceeds benchmark values for amorphous silicon semiconductors.

Ionic liquid clusters: structure, formation mechanism, and effect on the behavior of ionic liquids.

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

Schmitt trigger using a self-healing ionic liquid gated transistor.

High-mobility field-effect transistors fabricated with macroscopic aligned semiconducting polymers.

Ion gels prepared by in situ radical polymerization of vinyl monomers in an ionic liquid and their characterization as polymer electrolytes.

Printable cross-linked polymer blend dielectrics. Design strategies, synthesis, microstructures, and electrical properties, with organic field-effect transistors as testbeds.

Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic.

P31

scholarly article

P356

10.1002/ADMA.201605685

http://www.w3.org/2001/XMLSchema#string

P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

Yong-Young Noh

Antonio Facchetti

P577

2017-02-15T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

28198570

http://www.w3.org/2001/XMLSchema#string

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

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P2860

P2860

Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P31

P356

P407

P433

P478

P50

P577

P698

P356

P1433

P1476

P2093

P2860

P31

P356

P407

P433

P478

P50

P577

P698