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Multiferroic Clusters: A New Perspective for Relaxor-Type Room-Temperature MultiferroicsThe evolution of multiferroicsMultiferroicity: the coupling between magnetic and polarization ordersStudies of the Room-Temperature Multiferroic Pb(Fe0.5Ta0.5)0.4(Zr0.53Ti0.47)0.6O3: Resonant Ultrasound Spectroscopy, Dielectric, and Magnetic Phenomena.Structural, optical and vibrational properties of self-assembled Pbn+1(Ti1-x Fex)nO(3n+1)-δ Ruddlesden-Popper superstructuresNon-volatile memory based on the ferroelectric photovoltaic effectPolarization control of electron tunneling into ferroelectric surfaces.Direct atomic scale determination of magnetic ion partition in a room temperature multiferroic material.Ferroelectric Sm-doped BiMnO3 thin films with ferromagnetic transition temperature enhanced to 140 K.Multiferroic nanoscale Bi2FeCrO6 material for spintronic-related applications.Visualizing the interfacial evolution from charge compensation to metallic screening across the manganite metal-insulator transition.An epitaxial ferroelectric tunnel junction on silicon.Four-state ferroelectric spin-valve.Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe0.5Mn0.5O3Resistive switching properties of epitaxial BaTiO(3-δ) thin films tuned by after-growth oxygen cooling pressure.Unveiling hidden ferrimagnetism and giant magnetoelectricity in polar magnet Fe2Mo3O8.Interface control of bulk ferroelectric polarization.Interface effects and the evolution of ferromagnetism in La2/3Sr1/3MnO3 ultrathin filmsIntrinsic single-domain switching in ferroelectric materials on a nearly ideal surface.Phase separation enhanced magneto-electric coupling in La0.7Ca0.3MnO3/BaTiO3 ultra-thin films.Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors.The memory effect of magnetoelectric coupling in FeGaB/NiTi/PMN-PT multiferroic heterostructureTunnel electroresistance through organic ferroelectrics.Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials.A multilevel nonvolatile magnetoelectric memory.Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.Co thin films deposited directly on ZnO polar surfaces.Spin-polarized current injection induced magnetic reconstruction at oxide interface.Recent progress in multiferroic magnetoelectric composites: from bulk to thin films.Molecular spintronics.Multi-ferroic and magnetoelectric materials and interfaces.Magnetoelectric interfaces and spin transport.Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.Revisiting the zero-temperature phase diagram of stoichiometric SrCoO3 with first-principles methods.Probing the local strain-mediated magnetoelectric coupling in multiferroic nanocomposites by magnetic field-assisted piezoresponse force microscopy.Interface-induced room-temperature multiferroicity in BaTiO₃.Magnetoelectric Effect in Ceramics Based on Bismuth Ferrite.Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.Spin-dependent transport and functional design in organic ferromagnetic devices.
P2860
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P2860
description
2007 nî lūn-bûn
@nan
2007年の論文
@ja
2007年学术文章
@wuu
2007年学术文章
@zh
2007年学术文章
@zh-cn
2007年学术文章
@zh-hans
2007年学术文章
@zh-my
2007年学术文章
@zh-sg
2007年學術文章
@yue
2007年學術文章
@zh-hant
name
Tunnel junctions with multiferroic barriers.
@en
Tunnel junctions with multiferroic barriers.
@nl
type
label
Tunnel junctions with multiferroic barriers.
@en
Tunnel junctions with multiferroic barriers.
@nl
prefLabel
Tunnel junctions with multiferroic barriers.
@en
Tunnel junctions with multiferroic barriers.
@nl
P2093
P356
P1433
P1476
Tunnel junctions with multiferroic barriers.
@en
P2093
Agnès Barthélémy
Albert Fert
Karim Bouzehouane
Martin Gajek
Stéphane Fusil
P2888
P304
P356
10.1038/NMAT1860
P407
P577
2007-03-11T00:00:00Z