Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy.
about
Environmental stability of 2D anisotropic tellurium containing nanomaterials: anisotropic to isotropic transition.Controlling Structural Anisotropy of Anisotropic 2D Layers in Pseudo-1D/2D Material Heterojunctions.Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials.
P2860
Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy.
description
2016 nî lūn-bûn
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2016年の論文
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2016年学术文章
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2016年学术文章
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2016年学术文章
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2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
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2016年學術文章
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name
Synthesis of Highly Anisotropi ...... Properties Enabled by Epitaxy.
@en
Synthesis of Highly Anisotropi ...... Properties Enabled by Epitaxy.
@nl
type
label
Synthesis of Highly Anisotropi ...... Properties Enabled by Epitaxy.
@en
Synthesis of Highly Anisotropi ...... Properties Enabled by Epitaxy.
@nl
prefLabel
Synthesis of Highly Anisotropi ...... Properties Enabled by Epitaxy.
@en
Synthesis of Highly Anisotropi ...... Properties Enabled by Epitaxy.
@nl
P2093
P2860
P50
P356
P1433
P1476
Synthesis of Highly Anisotropi ...... Properties Enabled by Epitaxy
@en
P2093
Afsaneh Khosravi
Emmanuel Soignard
Marco Manca
Sefaattin Tongay
Xavier Marie
P2860
P356
10.1002/ADMA.201605551
P407
P577
2016-12-19T00:00:00Z
P698
P818
1705.04052