Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.
about
Unleashing the Full Potential of Magnetoelectric Coupling in Film Heterostructures.A magnetoelectric flux gate: new approach for weak DC magnetic field detection.Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films.Design and Fabrication of Full Wheatstone-Bridge-Based Angular GMR Sensors.Large-scale 3-D interconnected Ni nanotube networks with controlled structural and magnetic properties
P2860
Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年学术文章
@wuu
2016年学术文章
@zh
2016年学术文章
@zh-cn
2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
@yue
2016年學術文章
@zh-hant
name
Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.
@en
Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.
@nl
type
label
Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.
@en
Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.
@nl
prefLabel
Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.
@en
Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect.
@nl
P2093
P2860
P356
P1433
P1476
Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect
@en
P2093
Huaihao Chen
Menghui Li
Tianxiang Nan
Xianfeng Liang
Xinjun Wang
Zhiguang Wang
P2860
P304
P356
10.1002/ADMA.201602910
P407
P577
2016-09-04T00:00:00Z