Critical issues in the focused ion beam patterning of nanometric hole matrixes on GaAs based semiconducting devices.
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Critical issues in the focused ion beam patterning of nanometric hole matrixes on GaAs based semiconducting devices.
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Critical issues in the focused ...... based semiconducting devices.
@en
Critical issues in the focused ...... based semiconducting devices.
@nl
type
label
Critical issues in the focused ...... based semiconducting devices.
@en
Critical issues in the focused ...... based semiconducting devices.
@nl
prefLabel
Critical issues in the focused ...... based semiconducting devices.
@en
Critical issues in the focused ...... based semiconducting devices.
@nl
P50
P356
P1433
P1476
Critical issues in the focused ...... s based semiconducting devices
@en
P2093
A Orchowski
A Schertel
P304
P356
10.1088/0957-4484/17/6/036
P577
2006-03-03T00:00:00Z