Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics.
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Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年学术文章
@wuu
2016年学术文章
@zh
2016年学术文章
@zh-cn
2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
@yue
2016年學術文章
@zh-hant
name
Ultrafast triggered transient ...... egrated transient electronics.
@en
Ultrafast triggered transient ...... egrated transient electronics.
@nl
type
label
Ultrafast triggered transient ...... egrated transient electronics.
@en
Ultrafast triggered transient ...... egrated transient electronics.
@nl
prefLabel
Ultrafast triggered transient ...... egrated transient electronics.
@en
Ultrafast triggered transient ...... egrated transient electronics.
@nl
P2093
P2860
P356
P1433
P1476
Ultrafast triggered transient ...... egrated transient electronics.
@en
P2093
Anna Douglas
Cary L Pint
Keith Share
Nitin Muralidharan
Rachel Carter
P2860
P304
P356
10.1039/C5NR09095D
P407
P577
2016-03-17T00:00:00Z