Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.
about
In situ imaging of the conducting filament in a silicon oxide resistive switch.Kinetically driven switching and memory phenomena at the interface between a proton-conductive electrolyte and a titanium electrode.Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory.Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching.Regenerable resistive switching in silicon oxide based nanojunctions
P2860
Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.
description
2010 nî lūn-bûn
@nan
2010年の論文
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2010年学术文章
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2010年学术文章
@zh
2010年学术文章
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2010年学术文章
@zh-hans
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@zh-my
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2010年學術文章
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name
Silicon oxide: a non-innocent ...... s and nanoelectronics studies.
@en
Silicon oxide: a non-innocent ...... s and nanoelectronics studies.
@nl
type
label
Silicon oxide: a non-innocent ...... s and nanoelectronics studies.
@en
Silicon oxide: a non-innocent ...... s and nanoelectronics studies.
@nl
prefLabel
Silicon oxide: a non-innocent ...... s and nanoelectronics studies.
@en
Silicon oxide: a non-innocent ...... s and nanoelectronics studies.
@nl
P2093
P356
P1476
Silicon oxide: a non-innocent ...... s and nanoelectronics studies.
@en
P2093
Douglas Natelson
P304
P356
10.1021/JA108277R
P407
P50
P577
2010-12-22T00:00:00Z