High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnSe.
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High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnSe.
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2016 nî lūn-bûn
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2016年の論文
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name
High-Fidelity and Ultrafast In ...... Isoelectronic Center in ZnSe.
@en
High-Fidelity and Ultrafast In ...... Isoelectronic Center in ZnSe.
@nl
type
label
High-Fidelity and Ultrafast In ...... Isoelectronic Center in ZnSe.
@en
High-Fidelity and Ultrafast In ...... Isoelectronic Center in ZnSe.
@nl
prefLabel
High-Fidelity and Ultrafast In ...... Isoelectronic Center in ZnSe.
@en
High-Fidelity and Ultrafast In ...... Isoelectronic Center in ZnSe.
@nl
P2093
P2860
P1476
High-Fidelity and Ultrafast In ...... Isoelectronic Center in ZnSe.
@en
P2093
G Éthier-Majcher
S Francoeur
P2860
P304
P356
10.1103/PHYSREVLETT.117.167401
P407
P577
2016-10-11T00:00:00Z
P698
P818
1606.03338