Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.
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Spatially resolved photoresponse on individual ZnO nanorods: correlating morphology, defects and conductivitySynthesis and field emission studies of tower-like GaN nanowiresNanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector.Defect-free thin InAs nanowires grown using molecular beam epitaxy.Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy.Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications
P2860
Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.
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2012 nî lūn-bûn
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2012年の論文
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2012年学术文章
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2012年学术文章
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2012年学术文章
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2012年学术文章
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2012年学术文章
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2012年学术文章
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2012年學術文章
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2012年學術文章
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name
Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.
@en
Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.
@nl
type
label
Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.
@en
Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.
@nl
prefLabel
Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.
@en
Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.
@nl
P2093
P50
P356
P1433
P1476
Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.
@en
P2093
Fu-Hao Liu
Hong-Yi Xu
Ping-Ping Chen
Tian-Xin Li
Zhen-Yu Lu
Zhi-Ming Liao
P304
P356
10.1021/NN300962Z
P407
P577
2012-06-29T00:00:00Z