Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.
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Three-waveform bidirectional pumping of single electrons with a silicon quantum dot.High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics.AC Signal Characterization for Optimization of a CMOS Single-Electron Pump.Fractionally Charged Zero-Energy Single-Particle Excitations in a Driven Fermi Sea
P2860
Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.
description
2015 nî lūn-bûn
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name
Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.
@en
Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.
@nl
type
label
Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.
@en
Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.
@nl
prefLabel
Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.
@en
Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.
@nl
P2093
P50
P1433
P1476
Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots
@en
P2093
M H Madsen
S d'Hollosy
V A Guzenko
P304
P356
10.1021/ACS.NANOLETT.5B01190
P407
P577
2015-06-22T00:00:00Z
P5875
P698
P818
1509.01574