Inelastic effects in molecular transport junctions: The probe technique at high bias.
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The Anderson impurity model out-of-equilibrium: Assessing the accuracy of simulation techniques with an exact current-occupation relation.Controlling charge transport mechanisms in molecular junctions: Distilling thermally induced hopping from coherent-resonant conduction.Thermopower of molecular junctions: Tunneling to hopping crossover in DNA.
P2860
Inelastic effects in molecular transport junctions: The probe technique at high bias.
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2016 nî lūn-bûn
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2016年の論文
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2016年学术文章
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2016年学术文章
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2016年学术文章
@zh-cn
2016年学术文章
@zh-hans
2016年学术文章
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2016年学术文章
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2016年學術文章
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2016年學術文章
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name
Inelastic effects in molecular transport junctions: The probe technique at high bias.
@en
Inelastic effects in molecular transport junctions: The probe technique at high bias.
@nl
type
label
Inelastic effects in molecular transport junctions: The probe technique at high bias.
@en
Inelastic effects in molecular transport junctions: The probe technique at high bias.
@nl
prefLabel
Inelastic effects in molecular transport junctions: The probe technique at high bias.
@en
Inelastic effects in molecular transport junctions: The probe technique at high bias.
@nl
P2860
P356
P1476
Inelastic effects in molecular transport junctions: The probe technique at high bias
@en
P2093
Dvira Segal
P2860
P304
P356
10.1063/1.4944470
P407
P577
2016-03-01T00:00:00Z
P698
P818
1601.00001