about
Pattern recognition with "materials that compute"Enhanced piezoelectric properties of vertically aligned single-crystalline NKN nano-rod arraysProperties of epitaxial, (001)- and (110)-oriented (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 films on silicon described by polarization rotation.Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films.Ferroelastic switching in a layered-perovskite thin film.Single crystal functional oxides on siliconA review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications.Non-volatile control of 2DEG conductivity at oxide interfaces.Addressable and Color-Tunable Piezophotonic Light-Emitting Stripes.Achieving synchronization with active hybrid materials: Coupling self-oscillating gels and piezoelectric films.Temperature-Dependent Nanofabrication on Silicon by Friction-Induced Selective EtchingRelaxation of ferroelectric thin films of diisopropylammonium perchlorate.Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.Fast 180° magnetization switching in a strain-mediated multiferroic heterostructure driven by a voltage.Bending-induced electromechanical coupling and large piezoelectric response in a micromachined diaphragm.A molecular ferroelectric thin film of imidazolium perchlorate that shows superior electromechanical coupling.A new class of room-temperature multiferroic thin films with bismuth-based supercell structure.Electrically reversible cracks in an intermetallic film controlled by an electric field.Direct Probing of Polarization Charge at Nanoscale Level.Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures.Designing self-powered materials systems that perform pattern recognition.Selective High-Frequency Mechanical Actuation Driven by the VO2 Electronic Instability.Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials.Multiferroic operation of dynamic memory based on heterostructured cantilevers.Reliable polarization switching of BiFeO3.Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer.A flexoelectric microelectromechanical system on silicon.High electromechanical strain and enhanced temperature characteristics in lead-free (Na,Bi)TiO3-BaTiO3 thin films on Si substrates.Multifunctional epitaxial systems on silicon substratesFerroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO3Thin FilmsDiffuse Scattering from Lead-Containing Ferroelectric Perovskite Oxides
P2860
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P2860
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年学术文章
@wuu
2011年学术文章
@zh
2011年学术文章
@zh-cn
2011年学术文章
@zh-hans
2011年学术文章
@zh-my
2011年学术文章
@zh-sg
2011年學術文章
@yue
2011年學術文章
@zh-hant
name
Giant piezoelectricity on Si for hyperactive MEMS.
@en
Giant piezoelectricity on Si for hyperactive MEMS.
@nl
type
label
Giant piezoelectricity on Si for hyperactive MEMS.
@en
Giant piezoelectricity on Si for hyperactive MEMS.
@nl
prefLabel
Giant piezoelectricity on Si for hyperactive MEMS.
@en
Giant piezoelectricity on Si for hyperactive MEMS.
@nl
P2093
P2860
P50
P356
P1433
P1476
Giant piezoelectricity on Si for hyperactive MEMS
@en
P2093
C M Folkman
D A Felker
D G Schlom
J Lettieri
M S Rzchowski
P2860
P304
P356
10.1126/SCIENCE.1207186
P407
P577
2011-11-01T00:00:00Z