Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
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The Silicon:Colloidal Quantum Dot Heterojunction.Microscopic structure of the hydrogen-phosphorus complex in crystalline siliconMicroscopic structure of the hydrogen-boron complex in crystalline siliconStructure and properties of hydrogen-impurity pairs in elemental semiconductorsTheory of hydrogen diffusion and reactions in crystalline siliconNonparametrized tight-binding method for local and extended defects in homopolar semiconductors
P2860
Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
description
1988 nî lūn-bûn
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1988年の論文
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1988年学术文章
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1988年学术文章
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1988年学术文章
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1988年学术文章
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1988年学术文章
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1988年學術文章
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1988年學術文章
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1988年學術文章
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name
Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
@en
Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
@nl
type
label
Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
@en
Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
@nl
prefLabel
Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
@en
Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
@nl
P1476
Theory of hydrogen passivation of shallow-level dopants in crystalline silicon.
@en
P2093
P2860
P304
P356
10.1103/PHYSREVLETT.60.1422
P407
P577
1988-04-01T00:00:00Z