Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons.
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Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons.
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2018 nî lūn-bûn
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2018年の論文
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2018年学术文章
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2018年学术文章
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name
Field-Effect Transistors Based ...... Armchair Graphene Nanoribbons.
@en
Field-Effect Transistors Based ...... Armchair Graphene Nanoribbons.
@nl
type
label
Field-Effect Transistors Based ...... Armchair Graphene Nanoribbons.
@en
Field-Effect Transistors Based ...... Armchair Graphene Nanoribbons.
@nl
prefLabel
Field-Effect Transistors Based ...... Armchair Graphene Nanoribbons.
@en
Field-Effect Transistors Based ...... Armchair Graphene Nanoribbons.
@nl
P2860
P50
P356
P1476
Field-Effect Transistors Based ...... Armchair Graphene Nanoribbons
@en
P2093
Amit Gahoi
Danny Haberer
P2860
P304
P356
10.1021/ACSAMI.8B01116
P407
P577
2018-03-13T00:00:00Z