about
Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings.Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range.Electrical spin injection into InN semiconductor nanowires.Electronic phase coherence in InAs nanowires.X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor.Self-catalyzed VLS grown InAs nanowires with twinning superlattices.Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.Three-dimensional Si/Ge quantum dot crystals.Analysis of the resistance of two-dimensional holes in SiGe over a wide temperature rangeHot-hole effects in a dilute two-dimensional gas in SiGeAnalysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent ScreeningInvestigation of the emitter structure in SiGe/Si resonant tunneling structuresNovel nanostructure architecturesSuccessful shape-preservation of Ge-clusters during Si-coverage at low temperatureExcitons in dense two-dimensional electron-hole magnetoplasmasLateral thermal stability modulation for the definition of InGaAs/InP quantum wiresMany-body effects in dense electron-hole plasma in InGaAs QWs with simple and complex valence bandPhotoluminescence study of interdiffusion in In0.53Ga0.47As/InP surface quantum wellsExcitonic effects in low density electron-hole plasma in InGaAs/InP quantum wells under magnetic fieldHigh-Frequency Dephasing and Hot Electron Effects in Quasi-1D WiresMagnetoluminescence study of many-body effects in homogeneous quasi-two-dimensional electron-hole plasma in undopedInxGa1−xAs/InP single quantum wellsMagnetoresistance measurements in microstructured InGaAs/InP wiresMagnetotransport in narrow In0.53Ga0.47As/InP wiresSingle and Many Particle Effects in the Emission Spectra of Laterally Homogeneous 2D PlasmasBarrier controlled hot carrier cooling in In0.53Ga0.47As/InP quantum wellsBarrier-controlled thermalization inIn0.53Ga0.47As/InP quantum wellsImpact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wiresOptical depth profiling of ion beam etching induced damage in InGaAs/InP heterostructuresDomain formation due to surface steps in topological insulator Bi2Te3 thin films grown on Si (111) by molecular beam epitaxyMode of Growth of Ultrathin Topological Insulator Bi2Te3 Films on Si (111) SubstratesMolecular Beam Epitaxy Growth of GaAs/InAs Core–Shell Nanowires and Fabrication of InAs NanotubesBand engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistorsInterdiffusion in SiGe alloys with Ge contents of 25% and 50% studied by X-ray reflectivityIn situinvestigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scatteringHigh temperature investigations of Si/SiGe based cascade structures using x-ray scattering methodsAnnealing studies of high Ge composition Si/SiGe multilayersFrom conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPERealization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowiresEffect of Si-doping on InAs nanowire transport and morphologyTotal angular momentum conservation during tunnelling through semiconductor barriers
P50
Q33239605-13F2FFA5-5C4B-4678-9283-E944B361A204Q39351487-DA530CBF-C58E-45BE-A788-C54D380B7429Q39569957-2D1D8905-4276-4E9E-969D-8174C86AF607Q39716774-BF1E972E-0BDD-4369-9DD8-49D238228564Q42100020-56118E00-A604-4FE0-8511-D73D337C6BBFQ44979745-E1D6000D-C050-47FD-B53C-65A512A6ED90Q45253285-E1161486-0B76-446B-A7E0-17B5300B20EBQ50905155-C1EF9796-68E4-4E77-A885-B40F89FE7544Q59422366-05980577-F770-4FDB-AD27-A05459933526Q59445830-F2750994-166F-4B5F-84EB-94323B16B928Q59445867-74A570F1-9519-47FD-9D35-6DB7FCDC112BQ59445875-8B18C324-8C23-4A46-A643-613B5729E7AAQ59450399-F845EF7D-E644-43D5-9002-8488F500B061Q59450416-91926BB2-EDB6-47BC-9816-B1D82EBA2182Q59476707-FCC2B9CD-ED46-4C61-BE41-4C66CDC9D8B3Q59476717-ACE35A7B-A680-4D62-A2F8-D98A88AA32DAQ59476719-5F91EBC7-7B01-494E-84A9-F42FD8361A1EQ59476732-F4B57B9C-1F19-43C5-9969-A219EC320DF3Q59476744-4BFE5C3E-2131-4D5E-B355-6EFA672C0ECEQ59476746-C2802E2D-FBA4-480C-95FC-446C00B5ED23Q59476750-9DF8E5A1-3A98-44B4-B6BC-303DB55D460BQ59476789-6A23F72C-7EE4-485F-B5AA-5D7FF9E8B633Q59476793-B2D53280-058A-4BB1-B549-462E1931332EQ59476808-929295AA-2D44-434C-BDEA-61E82156660BQ59476828-1D4728F3-0D4B-4F04-8A4B-A018F5DC1976Q59476831-1F4F095B-DD1C-4E2B-9411-4AD86545195AQ59476851-D0525223-7C6F-4434-B6DB-3DA0F4A51333Q59476855-23F565A9-99E2-4C3F-9BF6-89C0ADABF2B8Q59509796-CF07161F-A86C-435E-A2B3-4695FF98563EQ59509838-F570D3D8-27E7-4612-B2CF-DE60664AE0A8Q59509842-30E7FC7E-92EB-4079-BD7B-D45F3E72D8B6Q59901228-C97710CA-656C-4C5E-822A-7B4E969F0EBCQ60097847-EA9503BA-6F23-4A5B-8BCB-725CA528A014Q60097853-C8595631-3334-41C3-8351-73ADC23AF693Q60097868-89045053-915D-441A-8638-2AE1CB65A969Q60097878-E11682FA-AE9A-4BE3-8C18-B4998C82DB45Q61041185-9D8C9FD4-9DBD-4351-8A17-A07FFF9A61D3Q61041193-70D3758D-7902-41DE-B5DD-0245FF02B8F8Q61041219-AF95C12A-BF7D-4423-877E-E4B6F494639AQ61626952-F6323E00-6D56-469D-8D1B-C44DF351770E
P50
description
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Detlev Grützmacher
@ast
Detlev Grützmacher
@en
Detlev Grützmacher
@es
Detlev Grützmacher
@nl
Detlev Grützmacher
@sl
type
label
Detlev Grützmacher
@ast
Detlev Grützmacher
@en
Detlev Grützmacher
@es
Detlev Grützmacher
@nl
Detlev Grützmacher
@sl
prefLabel
Detlev Grützmacher
@ast
Detlev Grützmacher
@en
Detlev Grützmacher
@es
Detlev Grützmacher
@nl
Detlev Grützmacher
@sl
P108
P106
P1153
7006712657
P31
P496
0000-0001-6290-9672