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Theory of thermopower in two-dimensional grapheneTextbook physics from a cutting-edge materialImproving the electrical properties of graphene layers by chemical dopingModification of the structural and electrical properties of graphene layers by Pt adsorbatesHigh thermoelectricpower factor in graphene/hBN devices.Role of different scattering mechanisms on the temperature dependence of transport in graphene.Screening and transport in 2D semiconductor systems at low temperatures.Integrated arrays of air-dielectric graphene transistors as transparent active-matrix pressure sensors for wide pressure ranges.High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide.Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics.In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene.Development and application of multiple-probe scanning probe microscopes.Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.A graphene-based physiometer array for the analysis of single biological cells.Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.Electric field-controlled rippling of graphene.Many-body interactions in quasi-freestanding grapheneAccessing the transport properties of graphene and its multilayers at high carrier density.Tunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms.Study on adsorption and desorption of ammonia on graphene.Electronic transport properties of Ir-decorated grapheneN-type graphene induced by dissociative H₂ adsorption at room temperature.Dopant morphology as the factor limiting graphene conductivity.Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulatorsHexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene.Magnetic-flux-driven topological quantum phase transition and manipulation of perfect edge states in graphene tube.Bioelectronic interfaces by spontaneously organized peptides on 2D atomic single layer materials.An electrical analogy to Mie scattering.Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions.Modeling of graphene nanoribbon devices.Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing.Unique role of self-assembled monolayers in carbon nanomaterial-based field-effect transistors.Graphene: a platform for surface-enhanced Raman spectroscopy.Solution-gated graphene transistors for chemical and biological sensors.Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors.Graphene nanomaterials as biocompatible and conductive scaffolds for stem cells: impact for tissue engineering and regenerative medicine.Interface engineering for CVD graphene: current status and progress.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Flexoelectricity in two-dimensional crystalline and biological membranes.Recent advances in transition-metal dichalcogenide based nanomaterials for water splitting.
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Q21708365-60D98D83-EF72-4D11-9ACA-2D5A4A5007CEQ21709799-241CFDE0-B9F2-40CB-B0CC-DA2DD8014941Q28821939-08A33D34-D60C-47FC-872F-6E2BC5CDBD41Q28821941-8B38EC3D-99BA-4635-97D5-C68ADDAEC90FQ30354411-0501A9CD-785C-42EE-A605-A617C3E26714Q30397040-C326AAFA-FCAD-4294-A6D8-256B00D4E447Q30398346-FD8F238C-F1BC-4C1D-8C98-692BE4682FF8Q30844143-B70EC974-44B0-4300-BA46-34F3BAD0D519Q30853466-F7A18B0B-4C4B-439A-8A7D-16204E74D590Q33850950-F856BE9F-147B-4D2F-AF6A-BE47E1388FD0Q33895228-357AB101-D0EA-4E62-A510-4B2DD20518BBQ34179610-2B69E6DD-2B56-4525-8D19-620A08790C78Q34429861-F92E6BCE-DC29-41B6-9F5A-94B709B6A2A6Q34431484-7B8A41BE-DA74-4FA9-BD1B-E2A962DDF3D4Q34804092-1FC8762D-E6CE-491C-9032-D24152D4A55FQ34996672-1C96B557-5157-4952-9502-40B8B9DBBF6BQ35105245-8CB2CA1A-C827-4A18-9DB4-1A22CEA465B6Q35164745-DBAB2F82-8EB5-403D-8664-1B7BA87863B6Q36057425-31239253-DEF3-4651-B650-D95632824FCBQ36068426-FFD86F56-70E3-48B2-A957-071CB9245B38Q36217290-6BCE90CB-BF20-4D33-BF38-E4BD4C377D5CQ36275857-EDB32C15-D088-4267-8D09-5CCD374E3108Q36330503-1C56C2E6-F2F4-499A-8515-9384E3A475A2Q36871715-CAD9CC19-2AA5-4E44-88B0-B4A55C3786A5Q37117599-D0FDF4B2-D8B4-4509-8261-150F5F2C9E08Q37198673-E1AB6943-3B32-48A8-BD24-B966AF278894Q37274011-C387AE81-951E-458B-B613-0206015F2204Q37314972-00852E17-AE4F-4BF7-971F-C7D8AB30FD7DQ37712924-C9C5AE44-4603-40FB-A75B-5307AF46E747Q38033093-97BFE052-D31A-4D80-B4EC-85BCA3A6A6A1Q38057639-DFBC7AA1-E5E4-496A-A3D1-F032A5AF0212Q38086188-E519BEB1-3063-43F7-9EA6-430A641AC3F9Q38093124-BDCEF8F8-8974-4B5F-B8B3-7DD686523A3FQ38129359-B131F2FC-F88A-42DA-A366-F66FDBC3DAB5Q38206123-75F43226-80E9-4BB1-B3DE-CD0C8C88C10FQ38219380-0CE5D5DF-09E1-4803-8001-87BA70720FCDQ38241251-031FAC39-B66F-4F9A-9649-199978F594F9Q38531628-EC9CA0EF-B25E-464D-908E-82C7123FF7DAQ38591871-40CC2327-BA30-4415-A886-13BA41D711BDQ38636438-0279B6D7-DED7-4FE5-B978-CA05D0EC42D5
P2860
description
im April 2008 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована у квітні 2008
@uk
name
Charged-impurity scattering in graphene
@en
Charged-impurity scattering in graphene
@nl
type
label
Charged-impurity scattering in graphene
@en
Charged-impurity scattering in graphene
@nl
prefLabel
Charged-impurity scattering in graphene
@en
Charged-impurity scattering in graphene
@nl
P2093
P2860
P356
P1433
P1476
Charged-impurity scattering in graphene
@en
P2093
E. D. Williams
J.-H. Chen
M. Ishigami
M. S. Fuhrer
P2860
P2888
P304
P356
10.1038/NPHYS935
P577
2008-04-13T00:00:00Z
P5875
P6179
1024874242